S12ME1

S12ME1/S12ME1F S12ME1/S12ME1F s Features 1. Internal insulation distance : 0.4mm or more 2. Creepage distance : 8mm or more Space distance : 5mm or more ( S12ME1 ) 8mm or more ( S12ME1F ) 3. Recognized by UL file No. E64380 Approved by BSI ( BS415 : NO.7088, BS7002 : NO.7410) European Safety Standard Approved, Long Creepage Distance Type Photothyristor Coupler g Lead forming type ( I type ) and taping reel type ( P type ) of S12ME1/S12ME1F are also available. ( S12ME1I/S12ME1FI,S12ME1P/S12ME1FP ) g DIN-VDE0884 approved type is also available as an option. s Outline Dimensions S12ME1 2.54± 0.25 6 5 4 6.5± 0.5 Internal connection diagram 6 5 4 ( Unit : mm ) S12ME1 1 2 3 1.2± 0.3 1 2 3 s Applications 1. ON-OFF operation for low power load 2. For triggering medium or high power thyristor and triac 3. Over voltage detection of switching power supplies Anode mark 9.22± 0.5 7.62± 0.3 3.5± 0.5 1 2 3 4 5 6 Anode Cathode NC Cathode Anode Gate 3.4± 0.3 3.7± 0.5 0.5± 0.1 0.5TYP. 0.26± 0.1 θ : 0 to 13 ˚ θ S12ME1F 2.54± 0.25 6 5 4 6.5± 0.5 Internal connection diagram 6 5 4 S12ME1 1 Anode mark 2 3 1.2± 0.3 1 2 3 9.22± 0.5 3.5± 0.5 7.62± 0.3 1 2 3 4 5 6 Anode Cathode NC Cathode Anode Gate 3.4± 0.5 0.26± 0.1 0.5± 0.1 10.16± 0.5 “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” S12ME1/S12ME1F s Absolute Maximum Ratings Input Parameter Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current ∗2 Repetitive peak OFF-state voltage ∗2 Repetitive peak OFF-state reverse voltage ∗3 Isolation voltage Operating temperature Storage temperature ∗4 Soldering temperature Symbol IF VR IT I surge V DRM V RRM V iso T opr T stg T sol Rating 50 6 0.2 2 400 400 4 000 - 30 to +100 - 55 to +125 260 ( Ta = 25˚C ) Unit mA V A rms A V V V rms ˚C ˚C ˚C Output ∗1 50Hz sine wave ∗2 R G = 20kΩ ∗3 40 to 60% RH, AC for 1 minute, f = 60Hz ∗4 For 10 seconds s Electro-optical Characteristics Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current Repetitive peak OFF-state reverse voltage ON-state voltage Holding current Critical rate of rise of OFF-state voltage Minimum trigger current Isolation resistance Turn-on time Symbol VF IR I DRM I RRM VT IH dV/dt I FT RISO t on Conditions I F = 20mA VR = 3V V DRM = Rated, R G = 20kΩ V DRM = Rated, R G = 20kΩ I T = 0.2A V D = 6V, R G = 20kΩ V DRM = 1/ 2 • Rated, R G = 20kΩ V D = 6V, R L = 100Ω , R G = 20kΩ DC500V, 40 to 60% RH V D = 6V, R L = 100Ω , I F = 20mA R G = 20kΩ MIN. 3 5 x 1010 TYP. 1.2 1.0 1011 - ( Ta = 25˚C ) MAX. 1.4 10 1 1 1.4 1.0 10 50 Unit V µA µA µA V mA V/ µ s mA Ω µs Output Transfer characteristics S12ME1/S12ME1F Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 50 40 30 20 10 0 - 30 0 - 30 0.2 RMS ON-state current I T ( A rms ) 0.1 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Minimum Trigger Current vs. Ambient Temperature 14 12 10 8 6 4 2 0 - 30 20kΩ V D = 6V R L = 100Ω R G = 10kΩ 500 Forward current I F ( mA ) 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0 T a = 75˚C 50˚C 25˚C Minimum trigger current I FT ( mA ) 0˚C - 25˚C 50kΩ 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 5 Minimum Trigger Current vs. Gate Resistance 100 50 V D = 6V R L = 100Ω T a = 25˚C Fig. 6 Break Over Voltage vs. Ambient Temperature 1000 R G = 10kΩ Minimum trigger current I FT ( mA ) Break over voltage V BO ( V ) 800 20 10 5 50kΩ 600 400 200 2 1 0 - 30 1 2 5 10 20 Gate resistance R G ( k Ω ) 50 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S12ME1/S12ME1F Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 Critical rate of rise of OFF-state voltage dV/dt ( V/ µ s ) 50 R G = 20kΩ V DRM = 1/ 2 Rated Holding current I H ( mA ) Fig. 8 Holding Current vs. Ambient Temperature 1 V D = 6V 0.5 R G = 10kΩ 0.2 0.1 0.05 20 10 5 20kΩ 50kΩ 2 1 0.02 0.01 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient temperature 10 - 5 Repetitive peak OFF-state current I DRM ( A ) V DRM = Rated R G = 20kΩ Fig.10 Turn-on Time vs. Forward Current 100 V D = 6V R L = 100Ω T a = 25˚C Turn-on time t on ( µ s ) 50 40 30 10 - 6 10 - 7 10 - 8 20 10 - 9 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 10 10 20 30 40 50 Forward current I F ( mA ) 100 Fig.11 ON-state Current vs. ON-state Voltage 200 I F = 20mA T a = 25˚C 160 ON-state current I T ( mA ) 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ON-state voltage V T ( V ) 1.4 1.6 S12ME1/S12ME1F s Basic Operation Circuit Medium/High Power Thyristor Drive Circuit 1 2 VIN 3 6 Load CG 4 RG ZS ZS : Snubber circuit AC 100V + VCC 5 Medium/High Power Triac Drive Circuit ( Zero-cross Operation ) 1 2 VIN 3 4 6 Load + VCC 5 RG CG AC 100V q Please refer to the chapter “ Precautions for Use” ( Page 78 to 93) .