S21MD4TV

S11MD5T/S21MD3TV/S21MD4TV S11MD5T/S21MD3TV/ S21MD4TV s Features 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in zero-cross circuit (S21MD4TV ) 3. High repetitive peak OFF-state voltage. S11MD5T V DRM : MIN. 400V S21MD3TV/S21MD4TV VDRM : MIN. 600V 4. Isolation voltage between input and output ( Viso : 5 000 Vrms ) 5. Recognized by UL : recognized, file No. E64380 High Noise-resistance Type Phototriac Coupler s Outline Dimensions S11MD5T/S21MD3TV S21MD4TV 6 S11MD5T 4 6.5± 0.5 ( Unit : mm ) Internal connection diagram 6 4 g Zero-cross circuit 1 2 3 Anode mark 1 2 3 0.9± 0.2 1.2± 0.3 2.54± 0.25 7.12± 0.5 7.62± 0.3 0.5TYP. 3.5± 0.5 1. For triggering of power triac 3.35± 0.5 s Applications 3.7± 0.5 0.5± 0.1 0.26± 0.1 θ : 0 to 13 ˚ 1 Anode 2 Cathode 3 NC θ 4 Anode/ Cathode 6 Anode/ Cathode Marking of S21MD3TV : S21MD3T s Model Line-ups 100V 200V S11MD5T S21MD3TV/S21MD4TV Marking of S21MD4TV : S21MD4T g Zero-cross circuit (S21MD4TV ) s Absolute Maximum Ratings Parameter Input Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current Repetitive peak OFF-state voltage ∗2 Isolation voltage Operating temperature Storage temperature ∗3 Soldering temperature Symbol IF VR IT Isurge VDRM Viso Topr Tstg Tsol Rating S11MD5T S21MD3TV/S21MD4TV 50 6 0.1 1.2 400 600 5 000 - 30 to + 100 - 55 to + 125 260 ( Ta = 25˚C) Unit mA V A rms A V V rms ˚C ˚C ˚C Output ∗1 Sine wave ∗2 40 to 60% RH, AC for 1 minute, f = 60Hz ∗3 For 10 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” S11MD5T/S21MD3TV/S21MD4TV s Electro-optical Characteristics Parameter S11MD5T/S21MD4TV S21MD3TV Reverse current Repetitive peak OFF-state current S11MD5T ON-state voltage S21MD3TV/S21MD4TV Holding current Critical rate S11MD5T/S21MD4TV of rise of OFFS21MD3TV state voltage Zero-cross S21MD4TV voltage Forward voltage Minimun trigger current Transfer characteristics Isolation resistance Turn-on time S11MD5T S21MD3TV S21MD4TV t on Symbol VF IR IDRM VT IH dV/dt V OX IFT RISO Conditions I F = 20mA I F = 30mA VR = 3V VDRM = Rated I T = 0.1A VD = 6V VDRM = 1/ 2 Rated ( Ta= 25˚C) MIN. 0.1 100 500 5 x 1010 TYP. 1.2 1.3 1.7 1 1011 80 20 MAX. 1.4 10-5 10-6 2.0 2.5 3.5 35 10 200 100 50 Unit V A A V V mA V/ µs V/ µs V mA Ω µs µs µs Input Output Resistance load I F = 15mA VD = 6V RL = 100Ω DC500V 40 to 60% RH VD = 6V, I F = 20mA∗4 RL = 100Ω ∗4 S21MD3TV : IF=30mA Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 50 40 30 20 10 0.10 RMS ON-state current I T 0.05 0 - 30 0 20 40 60 80 100 0 - 30 0 25 50 75 100 125 Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C ) S11MD5T/S21MD3TV/S21MD4TV Fig. 3 Forward Current vs. Forward Voltage 200 100 Forward current I F ( mA ) 50 20 10 Fig. 4 Minimum Trigger Current vs. Ambient Temperature 14 12 VD = 6V RL = 100Ω 25˚C 0˚C - 30˚C Minimum trigger current I FT ( mA ) T a = 100˚C 75˚C 50˚C 10 8 6 4 2 0 S11MD5T S21MD3TV S21MD4TV 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage V F ( V ) -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 5 Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature 1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25˚C) Fig. 6-a ON-state Voltage vs. Ambient Temperature (S11MD5T ) 1.6 I T = 100mA 1.5 1.2 S21MD3TV ON-state voltage V T ( V ) 1.1 1.4 1.0 S11MD5T S21MD4TV 1.3 0.9 1.2 0.8 0.7 - 30 1.1 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 1.0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 6-b ON-state Voltage vs. Ambient Temperature (S21MD3TV/S21MD4TV ) 2.0 I T = 100mA S21MD3TV ON-state voltage V T ( V ) 1.8 S21MD4TV Fig. 7 Holding Current vs. Ambient Temperature 10 V D = 6V 5 Holding current I H ( mA ) S11MD5T 1.9 2 1 0.5 1.7 1.6 S21MD3TV S21MD4TV 1.5 1.4 - 30 0.2 0.1 0 20 40 60 80 100 -30 Ambient temperature T a ( ˚C ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S11MD5T/S21MD3TV/S21MD4TV Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MD5T ) 2 Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltate (S21MD3TV/S21MD4TV ) 2 Repetitive peak OFF-state current I DRM ( A ) 10 - 9 Repetitive peak OFF-state current I DRM ( A ) T a = 25˚C T a = 25˚C 10 - 7 S21MD4TV S21MD3TV 2 5 5 2 10 - 10 10 - 8 5 5 100 200 300 400 500 OFF-state voltage V D ( V ) 600 100 200 300 400 500 OFF-state voltage V D ( V ) 600 Fig. 9-a Repetitive Peak OFF-state Current vs. Ambient Temperature (S11MD5T ) 10 7 Fig. 9-b Repetitive Peak OFF-state Current vs. Ambient Temperature (S21MD3TV/S21MD4TV ) 10 - 5 2 Repetitive peak OFF-state current I DRM ( A ) 2 10 8 Repetitive peak OFF-state current I DRM (A) 5 V DRM = Rated 5 V DRM = Rated 10 - 6 5 2 5 2 10 9 10 - 7 5 2 S21MD4TV 5 2 10 - 10 5 2 10 - 8 5 2 S21MD3TV 10 - 11 5 10 - 9 5 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig.10 Turn-on Time vs. Forward Current (S11MD5T/S21MD3TV ) 200 V D = 6V RL = 100Ω T a = 25˚C Fig.11 Zero-cross Voltage vs. Ambient Temperature (S21MD4TV ) R load I F = 15mA Zero-cross voltage VOX ( V ) 25 Turn-on time t on ( µ s ) 100 S11MD5T 50 S21MD3TV 20 20 10 20 Forward current I F 15 50 ( mA ) 100 -30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S11MD5T/S21MD3TV/S21MD4TV Fig.12 ON-state Current vs. ON-state Voltage 100 90 80 ON-state current I T ( mA ) 70 60 50 S11MD5T 40 S21MD3TV 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage VT ( V ) S21MD4TV VIN 3 + VCC 1 6 Load AC100V : S11MD5T AC200V : S21MD3TV S21MD4TV s Basic Operation Circuit Medium/High Power Triac Drive Circuit I F = 20mA T a = 25˚C 2 Zerocross Circuit 4 Note ) Please use on condition of the triac for power triggers. Zero-cross circuit is applied to S21MD4TV . q Please refer to the chapter “Precautions for Use.”