S22MD1V

S22MD1V/S22MD3 S22MD1V/S22MD3 .. s Features 1. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 2. Low trigger current ( IFT : MAX. 10mA at R G = 20kΩ ) 3. High isolation voltage between input and output S22MD1V ••• V iso : 5 000V rms S22MD3V ••• V iso : 2 500V rms g S22MD1V and S22MD3 are for 200V line. 4. Recognized by UL, file NO. 64380 Photothyristor Coupler g Lead forming type ( I type ) and taping reel type ( P type ) of S22MD1V are also available ( S22MD1VI/S22MD1P ) gg TUV ( DIN-VDE0884 ) approved type is also available as an option. s Outline Dimensions S22MD1V 2.54± 0.25 6 5 4 6.5± 0.5 ( Unit : mm ) Internal connection diagram 6 5 4 S22MD1V 1 Anode mark 2 3 0.9±0.2 1.2±0.3 1 2 3 7.12± 0.5 0.5TYP. 3.5±0.5 7.62± 0.3 1 2 3 4 5 6 Anode Cathode NC Cathode Anode Gate 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac 3.35± 0.5 s Applications 3.7± 0.5 0.5± 0.1 0.26± 0.1 θ : 0 to 13 ˚ θ S22MD3 2.54± 0.25 8 7 6 0.8± 0.2 5 Internal connection diagram 8 7 6 5 S22MD3 1 1.2± 0.3 2 3 4 0.85± 0.3 Anode mark 3.5± 0.5 1 2 3 4 1 2 5 6 4 3 8 7 Anode Cathode Gate Anode/ Cathode 9.22± 0.5 7.62± 0.3 0.5±0.1 3.0± 0.5 0.5TYP. 0.26± 0.1 θ : 0 to 13 ˚ θ “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” S22MD1V/S22MD3 s Absolute Maximum Ratings Parameter Input Forward current Reverse voltage RMS ON-state current ∗1 Peak one cycle surge current ∗2 Repetitive peak OFF-state voltage ∗2 Repetitive peak reverse voltage ∗3 Isolation voltage Operating temperature Storage temperature ∗4 Soldering temperature Symbol IF VR IT I surge V DRM V RRM V iso T opr T stg T sol Rating S22MD1V S22MD3 50 6 200 2 600 600 5 000 2 500 -30 to +100 -30 to +100 -55 to +125 -40 to +125 260 ( Ta = 25˚C ) Unit mA V mA rms A V V V rms ˚C ˚C ˚C Output ∗1 50H Z, sine wave ∗2 R G = 20kΩ ∗3 40 to 60% RH, AC for 1 minute ∗4 For 10 seconds s Electro-optical Characteristics Input Parameter Symbol Forward voltage VF Reverse current IR Repetitive peak OFF-state current I DRM ∗5 Repetitive peak reverse current I RRM ON-state voltage VT IH Holding current Critical rate of S22MD1V dV/dt rise of OFF-state voltage S22MD3 Minimum trigger current I FT R ISO Isolation resistance t on Turn-on time Conditions I F = 30mA V R = 3V V DRM = Rated, R G = 20kΩ V RRM = Rated, R G = 20kΩ I T = 200mA VD = 6V, R G = 20kΩ V DRM = 1/ 2 Rated, R G = 20kΩ VD = 6V, R L = 100Ω , R G = 20kΩ DC500V, 40 to 60% RH V D = 6V, R G = 20kΩ , R L = 100Ω , I F = 30mA MIN. 5 3 5 x 1010 − TYP. 1.2 1.0 0.2 1011 20 ( Ta= 25˚C ) MAX. 1.4 10-5 10-6 10-6 1.4 1 10 50 Unit V A A A V mA V/ µs mA Ω µs Output Transfer characteristics ∗5 Applies only to S22MD1V S22MD1V/S22MD3 Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 50 40 30 20 10 0 - 30 0 - 30 RMS ON-state current I T ( mA rms ) 200 100 0 25 50 75 100 Ambient temperature T a ( ˚C ) 125 Fig. 3 Forward Current vs. Forward Voltage 500 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 3.0 Fig. 4 Minimum Trigger Current vs. Ambient Temperature 12 V D = 6V R L = 100Ω Minimum trigger current I FT ( mA ) 10 RG = 10kΩ T a = 75˚C 50˚C 25˚C 0˚C - 25˚C 8 20kΩ 6 50kΩ 4 2 0 - 30 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 5 Minimum Trigger Current vs. Gate Resistance 100 50 V D = 6V R L = 100Ω T a = 25˚C Fig. 6 Break Over Voltage vs. Ambient Temperature 900 800 Break over voltage V BO ( V ) 700 600 500 400 300 200 100 20kΩ 50kΩ R G = 10kΩ Minimum trigger current I FT ( mA ) 20 10 5 2 1 1 2 5 10 20 50 Gate resistance R G ( kΩ ) 100 200 0 -30 -20 0 20 40 60 80 100 120 Ambient temperature T a ( ˚C ) S22MD1V/S22MD3 Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 Critical rate of rise of OFF-state voltage dV/dt ( V/ µ s ) 50 R G = 20kΩ V DRM = 1/ 2 Rated Holding current I H ( mA ) Fig. 8 Holding Current vs. Ambient Temperature 1 V D = 6V 0.5 RG = 10kΩ 0.2 0.1 0.05 20 10 5 20kΩ 50kΩ 2 1 0.02 0.01 - 30 0 20 40 60 Ambient temperature T a 80 ( ˚C ) 100 0 20 40 60 Ambient temperature T a ( ˚C ) 80 100 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature 5 Repetitive peak OFF-state current I DRM ( A ) V DRM = Rated 2 R G = 20kΩ 10 - 6 5 2 10 - 7 5 2 10 - 8 5 2 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S22MD1V/S22MD3 s Basic Operation Circuit q S22MD1V Medium/High Power Thyristor Drive Circuit + VCC 1 2 6 Load CG RG ZS AC 100V, 200V 5 VIN 3 4 ZS : Snubber circuit Medium/High Power Triac Drive Circuit ( Zero-cross Operation ) Load + VCC 1 2 6 5 RG CG AC 100V, 200V VIN 3 4 q S22MD3 Low Power Load Drive Circuit 8 7 2 3 VIN 4 RG 6 5 ZS : Snubber circuit CG RG CG ZS Load AC 100V, 200V + VCC 1 Medium/High Power Triac Drive Circuit 8 7 2 3 VIN 4 5 RG 6 CG RG CG AC 100V, 200V Load 1 + VCC q Please refer to the chapter “ Precautions for Use” ( Page 78 to 93 ) .