SHINDENGEN
Switching Power Transistor
HFX Series
(T2W80HFX)
2A NPN
2SC4232
OUTLINE DIMENSIONS
Case : MTO-3P Unit : mm
RATINGS
●Absolute Maximum Ratings Item
Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque
Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT TOR
Conditions
Tc = 25℃ (Recommended torque : 0.5N・m)
Ratings -55~150 150 1200 800 7 2 4 1 2 70 0.8 Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 1.7 TYP 8 Max 0.5 Max 3.5 Max 0.3
Unit ℃ ℃ V V V A
A W N・m
●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Conditions IC = 0.1A At rated Voltage At rated Voltage VCE = 5V, IC = 1A VCE = 5V, IC = 1mA IC = 1A IB = 0.2A Junction to case VCE = 10V, IC = 0.2A IC = 1A IB1 = 0.2A, IB2 = 0.4A RL = 250Ω, VBB2 = 4V
Unit V mA mA
V V ℃/W MHz μs
2SC4232
hFE - I C
VCE = 5V
100
Tc = 150°C
100°C
50°C 25°C
10
0 °C
− 25°C
DC Current Gain hFE
− 55°C
1 0.001 0.01
0.1
1
4
Collector Current IC [A]
2SC4232
Saturation Voltage
3 0.5A 1A 2A 4A 2.5
3
IC = 0.25A
2.5
2
2
1.5 4A 0.5A 1A 2A
1.5
Collector-Emitter Voltage VCE [V]
IC = 0.25A
0.5
0.5
Tc = 25°C 0 0.1 1 2
0 0.01
Base Current IB [A]
Base-Emitter Voltage VBE [V]
1
1
2SC4232
10
Switching Time - IC
ts
1
Switching Time tSW [µs]
ton 0.1 tf
IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25°C 0.01 0 0.5 1 1.5 2
Collector Current IC [A]
2SC4232
10
Switching Time - VCC
ts
1
Switching Time tSW [µs]
ton
tf 0.1
IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V Tc = 25°C 0.01 0 50 100 150 200 250 300
Collector Voltage VCC [V]
2SC4232
10
Switching Time - Tc
ts
1
Switching Time tSW [µs]
ton
tf
0.1
IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V R L = 250 Ω 0.01 0 50 100 150
Case Temperature Tc [°C]
2SC4232
10
L-Load Switching Time - IC
ts
1
Switching Time tSW [µs]
tf + tvs 0.1
tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25°C 0.01 0 0.5 1 1.5 2
Collector Current IC [A]
2SC4232
10
L-Load Switching Time - IC (At High Temperature)
ts
1
Switching Time tSW [µs]
tf + tvs
tf 0.1
IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100°C 0.01 0 0.5 1 1.5 2
Collector Current IC [A]
2SC4232
Transient Thermal Impedance
10
1
0.1
Transient Thermal Impedance θjc(t) [°C/W]
0.01
0.001 10-3 10-2
10-4
10-1
100
101
Time t [s]
2SC4232
4 10ms
Forward Bias SOA
1ms 150 µs 50 µs
DC PT limit 1 IS/B limit
Collector Current IC [A]
0.1
Tc = 25°C Single Pulse 0.01 1 10 100 800
Collector-Emitter Voltage VCE [V]
2SC4232
100
Collector Current Derating
Collector Current Derating [%]
80
IS/B limit
60
40
PT limit
20
VCE = fixed 0 0 50 100 150
Case Temperature Tc [°C]
2SC4232
4
Reverse Bias SOA
3.5
3
Collector Current IC [A]
2.5
2
1.5
1 IB1 = 0.25IC IB2 = 0.3A VBB2 = 5V Tc < 150°C
0.5
0
0
200
400
600
800
1000
1200
Collector-Emitter Voltage VCE [V]
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