2SK2195

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2195 (FP15W50VX2) 500V 15A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: E-pack Case ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. APPLICATION ●Switching power supply of AC 100V input ●High voltage power supply ●Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current（DC） IDP Continuous Drain Current（Peak) Continuous Source Current（DC） IS Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25℃ Vdis Terminals to case, AC 1 minute Dielectric Strength TOR （ Recommended torque : 0.5N･m ） Mounting Torque Ratings -55～150 150 500 ±30 15 45 15 60 15 2 0.8 Unit ℃ V A W A kV N・ m Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Theｒmal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time Conditions 2SK2195 ( FP15W50VX2 ) Min. 500 Typ. Max. 250 ±0.1 4.5 2.5 10 0.35 3.0 Unit V μA ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 7.5A, VDS = 10V ID = 7.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 7.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 15A VDS = 10V, VGS = 0V, f = 1MHZ ID = 7.5A, VGS = 10V, RL = 20Ω 65 1900 135 400 110 270 S 0.45 Ω 3.5 V 1.5 2.08 ℃/Ｗ nC pF 180 440 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2195 30 Tc = − 55 °C 25 Transfer Characteristics 25 °C 100 °C Drain Current ID [A] 20 150 °C 15 10 5 0 VDS = 25V pulse test TYP 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2195 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 1 ID = 7.5A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [°C] 2SK2195 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [°C] 2SK2195 100 Safe Operating Area 10 100 µs 200 µs Drain Current ID [A] R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2195 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance θjc(t) [°C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SK2195 10000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss Tc=25 °C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2195 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [°C] 2SK2195 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 200V 300 100V 10 200 VGS 5 100 ID = 15A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS