SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2667
( F3W90HVX2 )
900V 3A
FEATURES
●Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case : MTO-3P (Unit : mm)
Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION
●Switching power supply of AC 240V input ●High voltage power supply ●Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃) Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current(DC) IDP Continuous Drain Current(Peak) IS Continuous Source Current(DC) PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55~150 150 900 ±30 3 6 3 65 3 48 4.8 0.8 Unit ℃ V
Pulse width≦10μs, Duty cycle≦1/100
A W A mJ N・m
Tch = 150℃ Tch = 25℃ Tch = 25℃ ( Recommended torque :0.5 N・m )
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Static Drain-Source On-state Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions
2SK2667 ( F3W90HVX2 )
Min. 900 Typ. Max. 250 ±0.1 1.5 2.5 2.5 3.5 3.0 Unit V μA S Ω V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ ID = 1.5A, RL = 100Ω, VGS = 10V
30 630 16 67 40 140
4.7 3.5 1.5 1.92 ℃/W nC pF 70 230 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2667
6 Tc = − 55 °C 5
Transfer Characteristics
25 °C
Drain Current ID [A]
4 100 °C 3 150 °C 2
1 VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2667
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
10 ID = 1.5A
1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2667
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
2SK2667
10
Safe Operating Area
100 µs 200 µs 1
Drain Current ID [A]
1ms R DS(ON) limit 10ms 0.1
DC
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2667
Transient Thermal Impedance
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-3
10-2
10-1
100
101
Time t [s]
2SK2667
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2667
10000
Capacitance
1000
Ciss
Capacitance Ciss Coss Crss [pF]
100 Coss
Crss 10
f=1MHz Ta=25 °C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2667
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V → 0V Rg = 70 Ω
10
IAS = 3A
EAR = 4.8mJ
EAS = 48mJ
Single Avalanche Current IAS [A]
1
0.1 0.1 1
10
100
Inductance L [mH]
2SK2667
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2667
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
VGS VDD = 400V 200V 100V 200
15
300
10
5 100 ID = 3A TYP 0 0 10 20 30 40 0 50
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
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