SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2676
( F10W90HVX2 )
900V 10A
FEATURES
●Input capacitance (Ciss) is small.
OUTLINE DIMENSIONS
Case : MTO-3P (Unit : mm)
Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The switching time is fast. ●Avalanche resistance guaranteed. APPLICATION
●Switching power supply of AC 240V input ●High voltage power supply ●Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃) Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain Current(DC) IDP Continuous Drain Current(Peak) IS Continuous Source Current(DC) PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55~150 150 900 ±30 10 20 10 120 10 260 26 0.8 Unit ℃ V
Pulse width≦10μs, Duty cycle≦1/100
A W A mJ N・m
Tch = 150℃ Tch = 25℃ Tch = 25℃ ( Recommended torque :0.5 N・m )
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Static Drain-Source On-state Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff
2SK2676 ( F10W90HVX2 )
Conditions Min. 900 Typ. Max. 250 ±0.1 4.8 2.5 8.0 1.05 3.0 Unit V μA S Ω V
ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 5A, VDS = 10V ID =5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 25V, VGS = 0V, f = 1MHZ ID = 5A, RL = 30Ω, VGS = 10V
90 2150 50 210 140 440
1.4 3.5 1.5 1.04 ℃/W nC pF 250 740 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2676
20 Tc = − 55 °C
Transfer Characteristics
25 °C 15
Drain Current ID [A]
100 °C 10 150 °C
5
VDS = 25V TYP 0 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2676
100
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
10
ID = 5.0A 1
0.1
0.01
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2676
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
2SK2676
100
Safe Operating Area
10 100 µs 200 µs 1 R DS(ON) limit
Drain Current ID [A]
1ms
10ms DC 0.1
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2676
Transient Thermal Impedance
10
1
Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-3
10-2
10-1
100
101
Time t [s]
2SK2676
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2676
10000
Capacitance
Ciss
1000
Capacitance Ciss Coss Crss [pF]
Coss 100
Crss
10
f=1MHz Ta=25 °C TYP 1 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2676
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V → 0V Rg = 35 Ω
IAS = 10A
10
Single Avalanche Current IAS [A]
EAR = 26mJ
EAS = 260mJ
1 0.1 1
10
100
Inductance L [mH]
2SK2676
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2676
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
15 VGS VDD = 400V 300 200V 100V 200 10
5 100 ID = 10A TYP 0 0 50 100 0 150
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
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