SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
(F12F50VX2)
500V 12A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter
2SK2475
OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
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RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDC j I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDC j IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3N¥m j Mounting Torque Ratings -55`150 150 500 }30 12 36 12 50 12 2 0.5 Unit V A W A u NE
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage Æjc The\mal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton toff Turn-Off Time Conditions
2SK2475 ( F12F50VX2 )
Min. 500 3. 0 2. 5 Typ. Max. 250 }0. 1 0. 7 3. 5 1. 5 2. 5 Unit V ÊA S ¶ V /L nC pF 130 280 ns
I D = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V I D = 6A, VDS = 10V I D = 6A, VGS = 10V I D = 1mA, VDS = 10V I S = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 12A VDS = 10V, VGS = 0V, f = 1MHZ I D = 6A, VGS = 10V, RL = 25¶
7. 6 0. 55 3. 0 42 1200 90 270 90 190
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2SK2475
25 Tc = − 55 °C
Transfer Characteristics
25 °C
20
Drain Current ID [A]
100 °C 15 150 °C
10
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5 VDS = 25V pulse test TYP 0 5 10 15 20
0
Gate-Source Voltage VGS [V]
2SK2475
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
1 ID = 6A
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0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [°C]
2SK2475
5
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
4
3
2
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1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [°C]
2SK2475
100
Safe Operating Area
10 100 µs
Drain Current ID [A]
200 µs R DS(ON) limit 1
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1ms
10ms
0.1
DC
Tc = 25°C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2475
Transient Thermal Impedance
10
1
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Transient Thermal Impedance θjc(t) [°C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2475
Capacitance
Ciss 1000
Capacitance Ciss Coss Crss [pF]
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Coss
100
Crss
Tc=25 °C TYP 10 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2475
100
Power Derating
80
Power Derating [%]
60
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40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2475
500
Gate Charge Characteristics
20
Drain-Source Voltage VDS [V]
15
300
VDD = 400V 200V 100V 10
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VGS
200
5 100
ID = 12A 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
VDS
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