S15SCA4M

SHINDENGEN Schottky Barrier Diode Twin Diode S15SCA4M 40V 15A OUTLINE DIMENSIONS Case : TO-220 Unit : mm FEATURE FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche guaranteed ● High current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ●Home Appliances, Office Equipment ●Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Tc=129℃ IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Peak Surge Forward Current PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Repetitive Peak Surge Reverse Power TOR (Recommended torque：0.3N･m) Mounting Torque ●Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Cj Junction Capacitance θjc Thermal Resistance Tc=25℃) Conditions IF=7.5A, Pulse measurement, Rating of per diode VR=VRM, Pulse measurement, Rating of per diode f=1MHz, VR=10V, Rating of per diode junction to case Ratings -40～150 150 40 45 15 150 330 0.5 Unit ℃ ℃ V V A A W N･m Ratings Max.0.55 Max.5 Typ.340 Max.1.7 Unit V mA pF ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S15SCA4M Forward Voltage 10 Forward Current IF [A] Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S15SCA4M Junction Capacitance f=1MHz Tc=25°C TYP per diode 1000 Junction Capacitance Cj [pF] 1 00 0.1 1 10 Reverse Voltage VR [V] S15SCA4M 1000 Reverse Current Tc=150 °C [MAX] 100 Tc=150 °C [TYP] Reverse Current IR [mA] Tc=125 °C [TYP] 10 Tc=100 °C [TYP] 1 Tc=75 °C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S15SCA4M 25 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 20 15 0.5 10 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150 °C 0 VR tp D=tp /T T S15SCA4M 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 0.5 12 SIN 10 8 6 4 2 0 0.05 0.1 0.2 0.3 0 5 10 15 20 25 Average Rectified Forward Current IO [A] Tj = 150 °C IO 0 tp D=tp /T T S15SCA4M 30 Derating Curve Average Rectified Forward Current IO [A] 25 DC D=0.8 20 0.5 15 SIN 0.3 10 0.2 0.1 5 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V 0 0 IO VR tp D=tp /T T S15SCA4M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125°C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10µs) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [ µs] IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP