S1NB60

SHINDENGEN General Purpose Rectifiers DIL Bridges S1NB60 600V 1A FEATURES Small Dual In-Line(:DIL) Package 5 mm pitch between terminals Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommuication, Factory Automation OUTLINE DIMENSIONS Case : 1N Unit : mm RATINGS œAbsolute Maximum Ratings (If not specified Tl=25Ž) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, On glass-epoxy substrate, T a=25Ž I FSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, T j=25Ž I 2t Current Squared Time 1ms…tƒ10ms@T j=25Ž œElectrical Characteristics (If not specified Tl=25Ž) Item Symbol Conditions VF I F=0.5A, Pulse measurement, Rating of per diode Forward Voltage VR=VRM , Pulse measurement, Rating of per diode Reverse Current IR Thermal Resistance Æjl junction to lead Æja junction to ambient Ratings -40`150 150 600 1 30 4.5 Ratings Max.1.05 Max.10 Max.15 M ax.68 Unit Ž Ž V A A A 2s Unit V ÊA Ž/W Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd. S1NBx 10 Forward Voltage 1 Forward Current IF [A] Tl=150°C [TYP] Tl=25 °C [TYP] 0.1 Pulse measurement per diode 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S1NBx 3 Forward Power Dissipation Forward Power Dissipation PF [W] 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave S1NBx 1.4 Derating Curve Average Rectified Forward Current IO [A] 1.2 SIN 1 Glass-epoxy substrate Soldering land 9mm×9mm Conductor layer 35µm 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-load Free in air S1NBx 60 Peak Surge Forward Capability IFSM 10ms 10ms 50 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25 °C before surge current is applied 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles]