S4VB20

SHINDENGEN Bridge Diode Square In-line Package S4VB20 200V 4A OUTLINE DIMENSIONS Case : S4VB Unit : mm RATINGS ●　Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature Maximum Reverse Voltage VRM IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W Average Rectified Forward Current 50Hz sine wave, R-load, Ta=40℃ Peak Surge Forward Current Current Squared Time Mounting Torque Without heatsink IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ I2t 1ms≦t＜10ms　Ｔc=25℃ TOR （Recommended torque : 0.5N･m） Ratings Unit -40～150 ℃ 150 ℃ 200 V 4 A 2.6 80 A 32 A2ｓ 0.8 N･m Ratings Unit Max.1.05 V Max.10 μA Max.4.5 ℃/W ●　Electrical Characteristics (Tl=25℃) Item Symbol Conditions VF IF=2A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance θjl junction to lead 　 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S4VBx Forward Voltage 10 Forward Current IF [A] Tl=150°C [TYP] Tl=25 °C [TYP] 1 Pulse measurement per diode 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage VF [V] S4VBx 12 Forward Power Dissipation Forward Power Dissipation PF [W] 10 SIN 8 6 4 2 0 0 1 2 3 4 5 6 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave S4VBx 5 Derating Curve Average Rectified Forward Current IO [A] * θ fa = 10°C/W 4 l 3 l=25mm l=15mm 2 without heatsink l= 5mm 1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-load Free in air * with thermal compound, TOR=3kg-cm S4VBx 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25 °C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles]