CAT.No.TJ 536
SILICON BRIDGE DIODES
USKB
SERIES
UL File No. E142422
Summary
Bridge diodes are being required to take up less space accompanying the reduced size of electronic equipment. In order to respond to these needs, Shindengen has developed a new package in offering a complete lineup of bridge diodes that can be used in a wide range of power supply environments.
Features
Rectified forward current : 4A US4KB80R) 6A US6KB80R) 8A US8KB80R) ( ,( ,( , (with heat sink) 10A US10KB80R) 15A US15KB80R) 30A US30KB80R) ( , ( , ( ● L arge current capacity of 30A with compact package ● H igh I FSM a nd High Voltage ● U L approved Bridge Rectifier Diodes, registered in file number E142422 ● High-density mounting for improved space efficiency through the use of SIP Single In-Line Package) (
●
Application
TV, Monitor, Switching power supply, PC, Audio, Printer
CAT.No.TJ 536
RATINGS
●
Absolute Maximum Ratings(Tc=25℃/Unless otherwise specified)
I tem Symbol Conditions
US4KB80R US6KB80R US8KB80R
−55∼150 150 800
Unit
Storage Temperature Operation Junction Temperature Maximun Reverse Voltage Average Rectified Forward Current
Tstg Tj VRM
With heatsink
℃ ℃ V 8
(Tc=108℃)
4
(Tc=125℃)
6
(Tc=116℃)
Io
60Hz sine wave, Resistance load
Without heatsink
2.1
(Ta=30℃)
2.1
(Ta=30℃)
2.2
(Ta=26℃)
A
IFSM
Peak Surge Forward Current
IFSM1
60Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Non−repetitive, Tj=25℃ Tj=25℃, Per diode Terminals to cace, AC 1 minute
150 245
(tp=3ms)
175 470
(tp=1ms)
200 575
(tp=1ms)
A
Current Squared Time Dielectric Strength Mounting Torque ●
I2t Vdis
93
112 2.0 0.8
166
(3ms≦t<8.3ms) (1ms≦t<8.3ms) (1ms≦t<8.3ms)
A2 s kV Nm ・
: ・ TOR (Recommended torque 0.5N m)
Electrical Characteristics(Tc=25℃/Unless otherwise specified)
VF IR θ jc
Pulse measurement, Per diode VR=800V, Pulse measurement, Per diode Junction to case, With heatsink Junction to lead, Without heatsink Junction to ambient, Without heatsink
Forward Voltage Reverse Current
MAX. 1.00
(IF=2A)
MAX. 1.00
(IF=3A)
MAX. 1.00
(IF=4A)
V μA
MAX. 10 MAX. 3.5 MAX. 3.0 MAX. 5 MAX. 2.8
Thermal Resistance
θ jl θ ja
℃/W
MAX. 35 US4K80R US6K80R US8K80R
Type No.
●
Absolute Maximum Ratings(Tc=25℃/Unless otherwise specified)
Item Symbol Conditions
US10KB80R US15KB80R US30KB80R
−55∼150 150 800
Unit
Storage Temperature Operation Junction Temperature Maximun Reverse Voltage Average Rectified Forward Current
Tstg Tj VRM
With heatsink
℃ ℃ V 30
(Tc=97℃)
10
(Tc=100℃)
15
(Tc=101℃)
Io
60Hz sine wave, Resistance load
Without heatsink
2
(Ta=28℃)
2
(Ta=30℃)
2.1
(Ta=27℃)
A
IFSM
Peak Surge Forward Current
IFSM1
60Hz sine wave, Non−repetitive 1cycle peak value, Tj=25℃ Non-repetitive, Tj=25℃ Tj=25℃, Per diode Terminals to cace, AC 1 minute
150 245
(tp=3ms)
200 330
(tp=3ms)
350 1000
(tp=1ms)
A A2s kV Nm ・
Current Squared Time Dielectric Strength Mounting Torque ●
I2 t Vdis
93
166 2.0 0.8
510
(3ms≦t<8.3ms) (3ms≦t<8.3ms) (1ms≦t<8.3ms)
: ・ TOR (Recommended torque 0.5N m)
Electrical Characteristics(Tc=25℃/Unless otherwise specified)
VF IR θ jc
Pulse measurement, Per diode VR=800V, Pulse measurement, Per diode Junction to case, With heatsink Junction to lead, Without heatsink Junction to ambient, Without heatsink
Forward Voltage
Reverse Current
MAX. 1.10
(IF=5A)
MAX. 1.10
(IF=7.5A)
MAX. 1.10
(IF=15A)
V μA
MAX. 10 MAX. 2.5 MAX. 1.5 MAX. 5 MAX. 0.8
Thermal Resistance
θ jl θ ja
℃/W
MAX. 35 U10K80R U15K80R U30K80R
Type No.
CAT.No.TJ 536
US4KB80R
30 20 10
CHARACTERISTIC DIAGRAMS
Forward Voltage
10
Pulse measurement per diode
Forward Power Dissipation
200
Peak Surge Forward Current Capability
Forward Power Dissipation PF[W]
tp
Forward Current IF[A]
8
T
D=tp/T
[ Peak Surge Forward Current I FSM A]
Io
IFSM
8.3ms
Tc=150℃ [TYP]
5
Tc= 25℃ [TYP]
Tj=150℃
SIN
150
8.3ms
1cycle non−repetitive sine wave Tj=25℃
6
2 1 0.5
100
4
50
2
0.2 0.1 0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0
1
2
3
4
5
0 1
2
5
10
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
Average Rectified Forward Current Io[A]
Sine wave R-load Free in air
on glass−epoxy substrate
Derating Curve Tc-Io
Average Rectified Forward Current Io[A]
7 6 5 4 3 2 1 0 0
Sine wave R-load With heatsink
Tc
heatsink Tc−sensing point
Peak Surge Forward Current Capability
500
3
Peak Surge Forward Current I FSM1[A]
400 300 Tj=25℃ 200 Tj=150℃
2.5
P.C.B
SIN
2
soldering land 3mm φ
I (tp) FSM
tp
non−repetitive sine wave
SIN
1.5
1
0.5
100 90 80 70 60 50 3 4 5 6 7 8.3
0 0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
US6KB80R
Forward Voltage
30 20 10
Pulse measurement per diode
Forward Power Dissipation
14 12 10 8 6 4 2 0 0 250
Peak Surge Forward Current Capability
tp T D=tp/T
[ Peak Surge Forward Current I FSM A]
Forward Power Dissipation PF[W]
Io
Forward Current IF[A]
Tc=150℃ [TYP]
SIN
200
IFSM
8.3ms
8.3ms
1cycle non−repetitive sine wave Tj=25℃
5
Tc= 25℃ [TYP]
Tj=150℃
150
2 1 0.5
100
50
0.2 0.1 0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
2
3
4
5
6
7
8
0 1
2
5
10
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
3
Derating Curve Tc-Io
Average Rectified Forward Current Io[A]
10
Sine wave R-load With heatsink
Tc
heatsink Tc−sensing point
Peak Surge Forward Current Capability
1000
Average Rectified Forward Current Io[A]
2.5
P.C.B
8
Peak Surge Forward Current I FSM1[A]
SIN
2
soldering land 3mm φ
500 Tj=25℃
I (tp) FSM
tp
non−repetitive sine wave
Sine wave R-load Free in air
on glass−epoxy substrate
6
SIN
1.5
200
4
Tj=150℃
1
0.5
2
100
0 0
20
40
60
80
100
120
140
160
0 0
20
40
60
80
100
120
140
160
50 1
2
3
4
5
6
7
8.3
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
CAT.No.TJ 536
US8KB80R
50 20
CHARACTERISTIC DIAGRAMS
Forward Voltage
20
Pulse measurement per diode
Forward Power Dissipation
300
Peak Surge Forward Current Capability
Forward Power Dissipation PF[W]
[ Peak Surge Forward Current I FSM A]
Io tp T D=tp/T
250
8.3ms 8.3ms 1cycle non−repetitive sine wave Tj=25℃
Forward Current IF[A]
Tc=150℃ [TYP] Tc= 25℃ [TYP]
15
Tj=150℃
SIN
200
5 2 1
10
150
100
5
50
0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0 0
2
4
6
8
10
0 1
2
5
10
IFSM
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
Average Rectified Forward Current Io[A]
Sine wave R-load Free in air
on glass−epoxy substrate
Derating Curve Tc-Io
Average Rectified Forward Current Io[A]
14 12
Sine wave R-load With heatsink
Tc
Peak Surge Forward Current Capability
1000
3
heatsink
Tc−sensing point
2.5
SIN
2
P.C.B
Peak Surge Forward Current I FSM1[A]
500
10 8 6 4 2 0 0
Tj=25℃
I (tp) FSM
tp
non−repetitive sine wave
soldering land 3mm φ
SIN
1.5
200
Tj=150℃
1
100
0.5
0 0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
50 1
2
3
4
5
6
7
8.3
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
US10KB80R
Forward Voltage
50 30
Io
Forward Power Dissipation
200
Peak Surge Forward Current Capability
20
25
tp T D=tp/T
[ Peak Surge Forward Current I FSM A]
Forward Power Dissipation PF[W]
IFSM
8.3ms
Pulse measurement per diode
8.3ms
Forward Current IF[A]
10
Tc=150℃ [TYP]
5 2 1 0.5 0.2 0.1 0
Tc= 25℃ [TYP]
20
Tj=150℃
SIN
150
1cycle non−repetitive sine wave Tj=25℃
15
100
10
50
5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0
2
4
6
8
10
12
0 1
2
5
10
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
Average Rectified Forward Current Io[A] Average Rectified Forward Current Io[A]
3
Sine wave R-load Free in air
on glass−epoxy substrate
Derating Curve Tc-Io
16 14 12 10 8 6 4 2 0 0
Sine wave R-load With heatsink
Tc
heatsink Tc−sensing point
Peak Surge Forward Current Capability
500
Peak Surge Forward Current I FSM1[A]
400 300 Tj=25℃ 200 Tj=150℃
2.5
P.C.B
I (tp) FSM
tp
non−repetitive sine wave
SIN
2
soldering land 3mm φ
SIN
1.5
1
0.5
100 90 80 70 60 50 3 4 5 6 7 8.3
0 0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
CAT.No.TJ 536
US15KB80R
50 20
CHARACTERISTIC DIAGRAMS
Forward Voltage
40
Pulse measurement per diode
Forward Power Dissipation
250
Io tp T D=tp/T
Peak Surge Forward Current Capability
Forward Power Dissipation PF[W]
35 30
Tj=150℃
Forward Current IF[A]
10 5 2 1 0.5 0.2 0.1 0
Tc=150℃ [TYP] Tc= 25℃ [TYP]
SIN
[ Peak Surge Forward Current I FSM A]
200
IFSM
8.3ms
8.3ms
25 20 15 10 5 0 0
1cycle non−repetitive sine wave Tj=25℃
150
100
50
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
5
10
15
20
0 1
2
5
10
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
Average Rectified Forward Current Io[A] Average Rectified Forward Current Io[A]
3
Sine wave R-load Free in air
Derating Curve Tc-Io
24
Sine wave R-load With heatsink
Tc Tc
heatsink Tc−sensing point
Peak Surge Forward Current Capability
1000
2.5
P.C.B
20
Peak Surge Forward Current I FSM1[A]
500 Tj=25℃ 200
I (tp) FSM
tp
non−repetitive sine wave
on glass−epoxy substrate
SIN
2
soldering land 3mm φ
16
SIN
Tj=150℃
1.5
12
100
1
8
50
0.5
4
0 0
20
40
60
80
100
120
140
160
0 0
20
40
60
80
100
120
140
160
20 3
4
5
6
7
8.3
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
US30KB80R
Forward Voltage
100 80
Pulse measurement per diode
Tc=150℃ [TYP] Tc= 25℃ [TYP]
Forward Power Dissipation
500
Peak Surge Forward Current Capability
[ Peak Surge Forward Current I FSM A]
Forward Power Dissipation PF[W]
70
tp T D=tp/T
Io
Forward Current IF[A]
20 10 5 2 1 0.5 0.2 0.1 0
SIN
400
IFSM
8.3ms
50
60
Tj=150℃
8.3ms
50 40 30 20 10 0 0
1cycle non−repetitive sine wave Tj=25℃
300
200
100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
5
10
15
20
25
30
35
40
0 1
2
5
10
20
50
100
Forward Voltage VF[V]
Average Rectified Forward Current Io[A]
Number of Cycles [cycle]
Derating Curve Ta-Io
Average Rectified Forward Current Io[A] Average Rectified Forward Current Io[A]
3
Sine wave R-load Free in air
on glass−epoxy substrate
Derating Curve Tc-Io
50
Sine wave R-load With heatsink
Tc
heatsink Tc−sensing point
Peak Surge Forward Current Capability
2000
Peak Surge Forward Current I FSM1[A]
2.5
P.C.B
40
SIN
2
soldering land 3mm φ
1000 Tj=25℃
I (tp) FSM
tp
non−repetitive sine wave
30
SIN
1.5
500
Tj=150℃
20
1
0.5
10
200
0 0
20
40
60
80
100
120
140
160
0 0
20
40
60
80
100
120
140
160
100 1
2
3
4
5
6
7 8.3
Ambient Temperature Ta[℃]
Case Temperature Tc[℃]
Pulse Wide tp[ms]
CAT.No.TJ 536
OUTLINE DIMENSIONS
Package : D6K
22.1 −0.3
+
C3
− 3.45 +0.2
2−
+ 0.15
US4K 80R
Type No.
18.5 −0.3 + 10 −0.15
+
R1.8
3.6 −0.2 0.1
+
9771
Date code Control No. 2.05−0.2
+
+ 0.3
Polarity 2.5−0.2 2.2
+ 0.2 − +
18.6 −0.8
2−
1
2
3
4
+
1.1 −0.1 5.08 −0.3 5.08 −0.3 5.08 −0.3
+ + +
+
0.5 −0.1 0.05
+
1
2
3
4
Unit:
■The level of quality of our products is intended for use in standard applications. OA and other office equipment, communication equipment, measuring instruments, ( home appliances, industrial equipment, etc.)In the case these products are to be used in equipment or devices in which failure or malfunction of a product may directly affect human life or health(Nuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment, traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc.) always make sure to contact us in , advance. ■All specifications are subject to change without notice. ■Please contact us for the latest specifications before you order. ■Please use our products after confirming the details in the specifications and the application manuals.
U.S.A Shindengen America, Inc.
Head Office 161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A. Phone:+1-805-445-8420 Fax:+1-805-445-8421 Chicago Office 2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A. Phone:+1-847-444-1363 Fax:+1-847-444-0654
Europe Shindengen UK Ltd.
Head Office Howard Court, 12 Tewin Road, Welwyn Garden City, Hertfordshire. AL7 1BW U.K. Phone:+44-1707-332992 Fax:+44-1707-332955 German Branch Kapell Strasse 6, D-40479, Dusseldorf, Germany Phone:+49-211-4919680 Fax:+49-211-4986499
Asia Shindengen Singapore PTE Ltd.
750D, Chai Chee Road, #05-01, Technopark@Chai Chee, Singapore 469004 Phone:+65-6445-0082 Fax:+65-6445-6089
Shindengen(H.K.)Co., Ltd.
Head Office Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST, Kowloon, Hong Kong. Phone:+852-2317-1884 Fax:+852-2314-8561 Taipei Branch Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2, Chung Shan N. RD. Taipei, Taiwan R.O.C. Phone:+886-2-2560-3990 Fax:+886-2-2560-3991 Shanghai Liaison Office W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China Phone:+86-21-6270-1173 Fax:+86-21-6270-0419
Shindengen Electric Mfg. Co., Ltd.
Head Office New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku, Tokyo 100-0004, Japan Phone : +81-3-3279-4545, 4546, 4547 Fax : +81-3-3279-4519 Seoul Office Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, Kangnam-ku, Seoul, Korea Phone:+82-2-551-1431 Fax:+82-2-551-1432
【 URL 】 http://www.shindengen.co.jp
ELECTRIC MFG. CO., LTD.
07600 NQ) (