VRYA6

SHINDENGEN Varistor SMD VRYA6 OUTLINE DIMENSIONS Case : 1Y (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Symbol Tstg Tj Conditions Ta = 40℃, Sine wave, R-load, Commercial frequency, On alumina substrate, 1 element operation Ta = 40℃, Sine wave, R-load, Commercial frequency, On alumina substrate, 2 elements operation Ta = 40℃, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate, 1 element operation Ta = 40℃, Sine wave, R-load, Commercial frequency, On glass-epoxy substrate, 2 elements operation 50Hz, Sine wave, Non-repetitive, 2 elements series operation 10/200μs, Non-repetitive, 2 elements series operation 10/1000μs, Non-repetitive, 2 elements series operation Ratings -30～125 125 310 200 Unit ℃ ℃ IO Average Rectified Forward Current mArms 200 130 8 65 30 Arms A A Peak Surge Forward Current IFSM ●Electrical Characteristics (Tl=25℃) Item Symbol IF = 1mA, 1 element IF = 1mA, 2 elements series Forward Voltage Conditions VF Junction Capacitance Cj IF = 10mA, 1 element IF = 10mA, 2 elements series IF = 70mA, 1 element IF = 70mA, 2 elements series f = 100kHz, VD = 0V, OSC = 50mV Junction to ambient, On alumina substrate, 1 element operation Ratings Unit 2.05～2.55 4.10～5.10 2.50～3.00 V 5.00～6.00 2.85～3.35 5.70～6.60 TYP 13 pF MAX 90 MAX 150 ℃/W MAX 150 MAX 250 Thermal Resistance θja Junction to ambient, On alumina substrate, 2 elements operation Junction to ambient, On glass-epoxy substrate, 1 element operation Junction to ambient, On glass-epoxy substrate, 2 elements operation Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VRYA6 1000 per element Forward Voltage 100 Forward Current IF [mA] Tl=125°C [TYP] Tl=25 °C [TYP] 10 1 Pulse measurement 0.1 0 1 2 3 4 5 6 Forward Voltage VF [V] VRYA6 1.8 Tj=125°C per element Sine Wave Forward Power Dissipation 1.6 1.4 1.2 Power Dissipation P [W] 1 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Average Rectified Forward Current IO (rms) [A] VRYA6 Average Rectified Forward Current IO (rms) [A] 0.35 Derating Curve 0.3 Alumina substrate Soldering land 1mmφ Conductor layer 20µm 25 × 25 × 0.64mm 0.25 0.2 1-element operation 0.15 0.1 2-element series operation 0.05 Sine Wave R-load Free in air 0 20 40 60 80 100 120 140 160 0 Ambient Temperature Ta [°C] VRYA6 Average Rectified Forward Current IO (rms) [A] 0.28 Sine Wave R-load Free in air Derating Curve 0.24 Glass-epoxy substrate Soldering land 1mmφ Conductor layer 35µm 25 × 25 × 1.5mm 0.2 0.16 0.12 1-element operation 0.08 0.04 2-element series operation 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VRYA6 9 Peak Surge Forward Capability IFSM 8 10ms 10ms 1 cycle Peak Surge Forward Current IFSM (rms) [A] 7 2-element series operation, per element non-repetitive, sine wave, Tj=25 °C before surge current is applied 6 5 4 3 2 1 0 1 2 5 10 20 50 100 Number of Cycles [cycles] VRYA6 Junction Capacitance TYP per element Tl = 25°C 25 20 15 Junction Capacitance Cj [pF] 10 5 0 10 100 1000 10000 Frequency f [kHz]