BA892

BA 892 Silicon Rf Switching Diode Preliminary data • For VHF band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance 2 1 VES05991 Type BA 892 Marking A Ordering Code Q62702-A1214 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 35 100 -55 ...+125 -55 ...+150 Unit V mA °C VR IF T op T stg Thermal Resistance Junction - ambient 1) RthJA ≤ 450 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BA 892 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 20 1 µA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.65 0.6 0.92 0.85 0.45 0.36 100 0.6 1.3 1.1 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf 1/gp 0.7 0.5 - Ω I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Reverse resistance kΩ nH VR = 1 V, f = 100 MHz Series inductance Ls Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BA 892 Diode capacitance CT = f (V R) f = 1MHz EHD07009 Forward resistance rf = f (I F) f = 100MHz EHD07010 CT 2.0 pF 1.6 10 1 rf Ω 1.2 10 0 0.8 0.4 0.0 0 10 20 V 30 10 -1 10 -1 10 0 10 1 mA 10 2 VR ΙF Forward current IF = f (V F) T A = 25°C 10 3 mA 10 2 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 V 1.1 VF Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -03-1998