BAR63-05W

BAR 63 ... W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 63-04W BAR 63-05W BAR 63-06W Type BAR 63-04W BAR 63-05W BAR 63-06W Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 340 ≤ 180 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63 ... W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. 0.95 max. 50 1.2 V µA mV Unit V(BR) IR VF 50 - I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 1 75 1.4 0.3 pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Forward resistance rf τrr 2 - Ω I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time µs nH I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63 ... W Forward current IF = f (TA*;TS) * mounted on alumina 120 mA 100 TS 90 80 IF TA 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 3 K/W - IFmax / IFDC 10 2 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAR 63 ... W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f (I F) f = 100MHz 0.5 EHD07139 10 2 EHD07138 C T pF 0.4 rf Ω 10 1 0.3 0.2 10 0 0.1 0 0 10 20 V VR 30 10 -1 -2 10 10 -1 10 0 10 1 mA 10 2 ΙF Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01