BAR64-02W

BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package 2 1 VES05991 Type BAR 64-02W Marking Ordering Code M Q62702-A1215 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 125°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 200 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 220 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 64-02W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Characteristics Breakdown voltage Symbol min. Values typ. max. 1.1 V mV Unit V(BR) VF 200 - I (BR) = 5 µA Forward voltage I F = 50 mA AC characteristics Diode capacitance CT CC rf - 0.23 0.09 0.35 - pF VR = 20 V, f = 1 MHz Case capacitance f = 1 MHz Forward resistance Ω τrr 12.5 2.1 0.85 1.55 0.6 20 3.8 1.35 µs nH I F = 1 mA, f = 100 MHz I F = 10 mA, f = 100 MHz I F = 100 mA, f = 100 MHz Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 64-02W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 TS TA 150 Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAR 64-02W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f(IF) f = 100MHz 10 3 Ohm 0.6 pF 10 2 0.4 CT RF 10 1 10 0 10 -1 -2 10 0.3 0.2 0.1 0.0 0 5 10 15 20 V 30 10 -1 10 0 10 1 10 2 mA 10 3 VR IF Forward current IF = f (V F) T A = 25°C 10 3 mA Intermodulation intersept point IP3 = f (I F) f = parameter 10 2 5 f=900MHz 10 2 f=1800MHz 10 1 IP3 dBm IF 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 10 1 -1 10 10 0 mA 10 1 VF IF Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01