BAS125-07

BAS 125-07W Silicon Schottky Diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-D1347 Pin Configuration Package BAS 125-07W 17s Maximum Ratings Parameter Diode reverse voltage Forward current 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Symbol Value 25 100 500 250 150 - 55 ...+150 Unit V mA mW °C VR IF I FSM Ptot Tj T stg Surge forward current (t< 100µs) Total power dissipation, T S = 25 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) RthJA RthJS ≤ 725 ≤ 565 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-04-1998 1998-11-01 BAS 125-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 385 530 800 150 200 mV 400 650 900 Unit IR VR = 20 V VR = 25 V Forward voltage VF I F = 1 mA I F = 10 mA I F = 35 mA AC characteristics Diode capacitance CT rf - 16 1.1 - pF Ω VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Jun-04-1998 1998-11-01 BAS 125-07W Forward current IF = f (V F) Forward current IF = f (TA*;TS) * Package mounted on epoxy EHD07115 T A = Parameter 10 2 BAS 125... 100 BAS 125... EHD07119 ΙF mA 10 1 ΙF mA 80 TS 10 0 TA = -40C 25 C 85 C 150 C 60 TA 40 10 -1 20 10 -2 0.0 0.5 V 1.0 0 0 50 100 C 150 VF TA ; TS Reverse current I R = f (VR) T A = Parameter 10 1 BAS 125... EHD07116 Differential forward resistance rf = f (IF) f = 10 kHz 10 4 BAS 125... EHD07118 ΙR µA 10 0 TA = 125 C rf Ω 10 3 TA = 85 C 10 -1 10 2 10 -2 TA = 25 C 10 1 10 -3 0 10 V 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 VR ΙF 33 Semiconductor Group Semiconductor Group Jun-04-1998 1998-11-01 BAS 125-07W Diode capacitance CT = f (V R) f = 1MHz 1.0 BAS 125... EHD07117 CT pF 0.8 0.6 0.4 0.2 0.0 0 10 V 20 VR Semiconductor Group Semiconductor Group 44 Jun-04-1998 1998-11-01