BAS16-03W

BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type BAS 16-03W Marking B Ordering Code Q62702-A1231 Pin Configuration 1=A 2=C Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 111 °C Junction temperature Storage temperature Symbol Value 75 85 250 4.5 250 150 - 65 ...+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 235 ≤ 155 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 BAS 16-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V mV 715 855 1000 1250 1 µA Unit V(BR) VF 75 I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C Forward recovery voltage - - 30 50 1.75 V Vfr - I F = 10 mA, t p = 20 ns AC characteristics Diode capacitance CD t rr - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00017 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Mar-13-1998 1998-11-01 BAS 16-03W Forward current IF = f (TA*;TS) * Package mounted on epoxy Reverse current IR = f (TA) 300 BAS 16 EHB00021 BAS 16 EHB00022 ΙF mA ΙR 10 5 nA V R = 70 V 10 4 200 5 max. 70 V 10 3 TA 100 TS 5 25 V 10 2 5 typ. 0 0 50 100 C 150 10 1 0 50 100 C TA 150 TA ; TS Forward current IF = f V F) Peak forward current IFM = f (t) T A = 25°C TA = 25°C 10 2 BAS 16 EHB00024 150 BAS 16 EHB00023 Ι F mA Ι FM A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 100 typ max 10 0 50 10 -1 tp D= 0 0 0.5 1.0 V 1.5 tp T 10 -3 10-2 10-6 T 10-2 10-1 s 100 t 10 -5 10 -4 VF Semiconductor Group Semiconductor Group 33 Mar-13-1998 1998-11-01 BAS 16-03W Forward voltage V F = f (TA) 1.0 BAS 16 EHB00025 VF V Ι F = 100 mA 10 mA 1 mA 0.1 mA 0.5 0 0 50 100 C TA 150 Semiconductor Group Semiconductor Group 44 Mar-13-1998 1998-11-01