BAS70-04S

BAS 70-04S Silicon Schottky Diode Array • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 4 5 6 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-04S Marking Ordering Code 74s Q62702-A3468 Pin Configuration 1/4=A1 2/5=C2 Package 3/6=C1/A2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S ≤ 97°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 70 70 100 250 150 -55...+150 -55...+150 Unit V mA mW °C VR IF IFSM Ptot Tj Top Tstg RthJA RthJS ≤ 445 ≤ 210 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAS 70-04S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V µA 375 705 880 0.1 10 mV 300 600 750 410 750 1000 Unit V(BR) IR 70 I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage VF I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT τ - 1.6 30 2 100 - pF ps Ω VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Forward resistance rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAS 70-04S Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter 10 2 BAS 70W/BAS 170W EHB00042 TA = Parameter 10 2 BAS 70W/BAS 170W EHB00043 ΙF mA 10 1 ΙR µA 10 1 TA = 150 C 10 0 85 C 10 0 10 -1 TA = -40 C 25 C 85 C 150 C 10 -1 10 -2 25 C 10 -2 0.0 0.5 1.0 V 1.5 10 -3 0 20 40 60 V 80 VF VR Diode capacitance CT = f (V R) f = 1MHz BAS 70W/BAS 170W EHB00044 Differential forward resistance rf = f (IF) f = 10 kHz 2.0 10 3 BAS 70W/BAS 170W EHB00045 CT pF rf Ω 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 80 10 0 0.1 1 10 mA 100 VR ΙF 33 Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 BAS 70-04S Forward current IF = f (TA*;TS) * Package mounted on epoxy 100 mA 80 70 60 50 40 30 20 10 0 0 TS IF TA 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01