BAS70-T1

BAS70-T1

  • 厂商:

    SIEMENS(西门子)

  • 封装:

  • 描述:

    BAS70-T1 - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose ...

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS70-T1 数据手册
HiRel Silicon Schottky Diode Features ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package qualified ESA/SCC Detail Spec. No.: 5512/020 BAS 70 T1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS70-T1 (ql) Marking Ordering Code see below Pin Configuration Package T1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1173 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702A674 (see Chapter Order Instructions for ordering example) Table 1 Parameter Reverse voltage Forward current Surge forward current 1) Power dissipation Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case 1) Maximum Ratings Symbol Limit Values 70 70 85 250 - 55 to + 150 - 65 to + 150 + 250 150 100 Unit V mA mA mW °C °C °C °C K/W VR IF IFSM Ptot Top Tstg Tsol Tj Rth(j-c) t £ 10 ms, duty cycle = 10% Semiconductor Group 1 Draft A03 1998-04-01 BAS 70 Electrical Characteristics Table 2 Parameter Reverse current 1, VR = 70 V Reverse current 2, VR = 56 V Forward voltage 1, IF1 = 1 mA Forward voltage 2, IF2 = 10 mA Forward voltage 3, IF3 = 15 mA Differential forward resistance 2) IF2 = 10 mA, IF3 = 15 mA 2) DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.38 0.70 0.85 30 max. 2 0.1 0.44 0.78 1.00 32 mA mA V V V W 0.30 0.60 0.80 24 Unit IR1 IR2 VF1 VF2 VF3 RFD DV F R FD = -------------------- W Ð3 5 ´ 10 AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 1.5 max. 2.0 pF 1.2 Unit Table 3 Parameter Total capacitance, VR = 0 V, f = 1 MHz CT Semiconductor Group 2 Draft A03 1998-04-01 BAS 70 Order Instructions Full type variant including type variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BAS70- (x) (ql) (x): Package Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702A674 BAS70-T1 ES For BAS70 in T1 Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 3 Draft A03 1998-04-01 BAS 70 Figure 1 Symbol T1 Package Millimetre min. max. 1.45 1.35 0.40 0.50 0.30 0.10 0.60 1.30 1.15 0.10 0.06 5.50 0.40 A B C D E F G H Semiconductor Group 4 Draft A03 1998-04-01
BAS70-T1
1. 物料型号: - 型号:BAS70

2. 器件简介: - 这是一个HiRel Silicon Schottky Diode,用于高速开关、电路保护、电压钳位、高级别检测和混合,还具备密封微波封装,符合ESA/SCC详细规格编号5512/020。

3. 引脚分配: - BAS70-T1 (ql) 有两个引脚。

4. 参数特性: - 最大额定反向电压:70V - 最大额定正向电流:70mA - 浪涌正向电流:85mA(10ms,占空比10%) - 最大总功耗:250mW - 工作温度范围:-55至+150°C - 存储温度范围:-65至+150°C - 焊接温度:+250°C - 结温:150°C - 热阻(结到外壳):100 K/W

5. 功能详解: - 直流特性在25°C时,包括反向电流、正向电压等参数。 - 交流特性在25°C时,包括总电容等参数。

6. 应用信息: - 适用于高速开关、电路保护、电压钳位、高级别检测和混合等应用。

7. 封装信息: - 提供了T1封装的详细尺寸图,包括各个部分的最小和最大尺寸。
BAS70-T1 价格&库存

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BAS70-07,215
  •  国内价格
  • 1+0.44099
  • 10+0.42349
  • 100+0.37099
  • 500+0.36049

库存:0