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BAT15-094ES

BAT15-094ES

  • 厂商:

    SIEMENS

  • 封装:

  • 描述:

    BAT15-094ES - HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrie...

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT15-094ES 数据手册
HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device, observe handling precautions! T BAT 15 T1 Type BAT 15-013 (ql) Marking Ordering Code see below Pin Configuration Package T BAT 15-014 (ql) BAT 15-033 (ql) BAT 15-034 (ql) BAT 15-043 (ql) BAT 15-044 (ql) BAT 15-063 (ql) BAT 15-064 (ql) BAT 15-073 (ql) BAT 15-074 (ql) BAT 15-093 (ql) BAT 15-094 (ql) BAT 15-103 (ql) BAT 15-104 (ql) BAT 15-113 (ql) BAT 15-114 (ql) BAT 15-123 (ql) BAT 15-124 (ql) (ql) Quality Level: - see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see below see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 see BAT15-013 Ordering Code: Q62702A1178 Ordering Code: on request Ordering Code: on request Ordering Code: Q62702A1180 T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1 T T1 P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, (see Chapter Order Instructions for ordering example) Semiconductor Group 1 Draft A03 1998-04-01 BAT 15 Table 1 Parameter Maximum Ratings Symbol Limit Values 3 100 100 50 50 50 Unit V mA Reverse voltage Forward current BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Power dissipation BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Operating temperature range Storage temperature range Soldering temperature Burn-out energy 1) BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 1) VR IF Ptot 100 100 50 50 50 mW Top Tstg Tsol EB - 55 to + 150 - 65 to + 175 + 220 5.0 5.0 2.0 2.0 1.0 °C °C °C Erg Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General criterion for burn-out energy is a 3 dB increase in noise figure. Semiconductor Group 2 Draft A03 1998-04-01 BAT 15 Electrical Characteristics Table 2 Parameter Breakdown voltage IR = 10 mA Reverse current DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. V mA 5 5 5 1 1 V 0.15 0.17 0.18 0.19 0.20 V 0.23 0.27 0.29 0.30 0.31 0.28 0.30 0.31 0.32 0.33 3 Unit V(BR) IR VR = 2 V BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 1 IF1 = 0.01 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Forward voltage 2 IF2 = 1 mA BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 VF1 VF2 Semiconductor Group 3 Draft A03 1998-04-01 BAT 15 Table 2 Parameter DC Characteristics at TA = 25 °C unless otherwise specified (contÕd) Symbol min. 2) Limit Values typ. max. Unit W Series resistance IF1 = 10 mA, IF2 = 50 mA BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124 2) RF 3.0 4.0 3.5 4.5 4.5 5.5 6.0 7.0 8.0 3.5 4.5 4.0 5.0 5.5 6.5 7.0 8.0 9.0 DV F R F = ------------------------ W Ð3 40 ´ 10 Semiconductor Group 4 Draft A03 1998-04-01 BAT 15 Table 3 Parameter AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. max. pF NF 0.35 0.30 0.27 0.23 0.20 0.60 0.35 0.30 0.25 0.22 dB Unit Total capacitance VR = 0 V, f = 1 MHz BAT15-013, -014, -033, -034 BAT15-043, -044, -063, -064 BAT15-073, -074, -093, -094 BAT15-103, -104, -113, -114 BAT15-123, -124 Noise figure I.F. = 30 MHz LO power = 0 dBm LO = 9.375 GHz BAT15-013, -014 BAT15-033, -034 BAT15-043, -044 BAT15-063, -064 BAT15-073, -074 BAT15-093, -094 BAT15-103, -104 BAT15-113, -114 BAT15-123, -124 CT - 5.3 6.3 5.3 6.3 5.3 6.3 5.7 7.2 8.0 5.5 6.5 5.5 6.5 5.5 6.5 6.0 7.5 9.0 Semiconductor Group 5 Draft A03 1998-04-01 BAT 15 Order Instructions Full type variant including type variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BAT15- (x) (ql) (x): Type Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702A1180 BAT15-014 ES For BAT15-014 in T1 Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 6 Draft A03 1998-04-01 BAT 15 Figure 1 Symbol T Package Millimetre min. max. 1.45 1.35 0.40 1.30 1.15 - A B C Semiconductor Group 7 Draft A03 1998-04-01 BAT 15 Figure 2 Symbol T1 Package Millimetre min. max. 1.45 1.35 0.40 0.50 0.30 0.10 0.60 1.30 1.15 0.10 0.06 5.50 0.40 A B C D E F G H Semiconductor Group 8 Draft A03 1998-04-01
BAT15-094ES
物料型号: - BAT 15-013 (ql) - BAT 15-014 (ql) - BAT 15-033 (ql) - BAT 15-034 (ql) - BAT 15-043 (ql) - BAT 15-044 (ql) - BAT 15-063 (ql) - BAT 15-064(ql) - BAT 15-073 (ql) - BAT 15-074 (ql) - BAT 15-093 (ql) - BAT 15-094 (ql) - BAT 15-103 (ql) - BAT 15-104(ql) - BAT 15-113(ql) - BAT 15-114(ql) - BAT 15-123 (ql) - BAT 15-124(ql)

器件简介: - HiRel Discrete和微波半导体 - 中等势垒二极管,用于检波器和混频器应用 - 密封微波封装,符合ESA/SCC详细规范5106/014 - 静电放电敏感器件,需注意处理预防措施

引脚分配: - BAT 15-013和BAT 15-014的引脚配置为1和2,封装为T T1 - 其他型号的引脚配置和封装与BAT 15-013相同或类似

参数特性: - 反向电压:3V - 正向电流:不同型号有不同的限制值,范围从50mA到100mA - 功率耗散:不同型号有不同的限制值,范围从50mW到100mW - 工作温度范围:-55至+150℃ - 存储温度范围:-65至+175℃ - 焊接温度:+220℃ - 烧毁能量:不同型号有不同的值,范围从1.0到5.0 Erg

功能详解: - 击穿电压:最小值为3V - 反向电流:不同型号有不同的限制值,单位为微安 - 正向电压:不同型号在不同电流下有不同的电压值 - 系列电阻:不同型号有不同的电阻值,单位为欧姆 - 总电容:不同型号在0V反向电压和1MHz频率下有不同的电容值,单位为皮法 - 噪声系数:不同型号在30MHz中频下有不同的噪声系数值,单位为分贝

应用信息: - 该文档提供了订购指南,包括完整型号变体和质量水平必须由订购者指定 - 订购代码示例:Q62702A1180 BAT15-014 ES,表示BAT15-014型号,T1封装,ESA空间质量水平

封装信息: - 提供了T封装和T1封装的详细尺寸图,包括最小和最大尺寸
BAT15-094ES 价格&库存

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