BAT165

BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting (SMD) 2 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 165 Marking White/C Ordering Code Q62702-A1190 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Average forward current (50/60Hz, sinus) Surge forward current (t < 100µs) Total power dissipation, T S = 66 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 40 750 500 2.5 600 150 - 65 ...+150 Unit V mA A mW °C VR IF IFAV IFSM Ptot Tj Tstg RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 165 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 50 900 µA nA V 0.305 0.38 0.44 0.58 0.4 0.7 Unit IR IR VF - VR = 30 V Reverse current VR = 30 V, TA = 65 °C Forward voltage I F = 10 mA I F = 100 mA I F = 250 mA I F = 750 mA AC characteristics Diode capacitance CT - 8.4 12 pF VR = 10 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAT 165 Forward current IF = f (TA*;TS) * Package mounted on epoxy 800 mA TS TA 600 IF 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01