BAT 17W
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications
3
2 1
BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W
VSO05561
Type BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W
Marking Ordering Code 53s 54s 55s 56s Q62702-A1271 Q62702-A1272 Q62702-A1273 Q62702-A1274
Pin Configuration 1=A 1 = A1 1 = A1 3 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2
Package SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Symbol Value 4 130 150 150 150 - 55 ...+150 - 55 ...+150 ≤ 435 ≤ 550 ≤ 355 ≤ 390 °C Unit V mA mW
VR IF
Total power dissipation 1) BAT 17W , T A ≤ 97 °C Ptot BAT 17-04W, -05W, -06W , TS ≤ 92 °C tot P Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) BAT 17W Junction - ambient 1) BAS 17-04W ... Junction - soldering point BAT 17W Junction - soldering point BAT 17-04W ...
Tj Top Tstg RthJA RthJA RthJS RthJS
K/W
1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 17W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V µA 0.25 10 1.25 nA mV 200 250 350 275 340 425 350 450 600 Unit
V(BR) IR
4
I (BR) = 10 µA
Reverse current
VR = 3 V VR = 4 V
Reverse current
IR VF
VR = 3 V, TA = 60 °C
Forward voltage
I F = 0.1 mA I F = 1 mA I F = 10 mA
AC characteristics Diode capacitance
CT rf
0.4 -
0.55 8
0.75 15
pF Ω
VR = 1 V, f = 1 MHz
Differential forward resistance
I F = 5 mA, f = 100 kHz
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAT 17W
Forward current IF = f (V F)
T A = parameter
10 2
mA
Diode capacitance CT = f (VR) f = 1MHz
0.7
pF
10 1
TA = 25°C TA = 85°C TA = 125°C
10 0
CT
0.5
IF
0.4
0.3 10 -1 0.2
10 -2 0.0
0.2
0.4
0.6
V
1.0
0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VF
VR
Leakage current I R = f (V R) T A = Parameter
10 2
uA
10 1
125°C
IR
10 0
85°C
10 -1
10 -2
25°C
10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VR
Semiconductor Group Semiconductor Group
33
Sep-04-1998 1998-11-01
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