BAT 60B
Silicon Schottky Diode • Rectifier Schottky diode for mobile communication • Low voltage high inductane • For power supply • For clamping and proptection in low voltage application • For detection and step-up-conversion
2
1
VPS05176
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60B Marking blue/5 Ordering Code Q62702-A1189 Pin Configuration 1=C 2=A Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S = 28 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient
1)
Symbol
Value 10 3 5 1350 150 - 55 ...+150
Unit V A mA mW °C
VR IF IFSM Ptot Tj Tstg
RthJA RthJS
≤ 160 ≤ 90
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 60B
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit
IR
VR = 5 V VR = 8 V
Reverse current
IR
-
VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C
Forward voltage
VF
I F = 10 mA I F = 100 mA I F = 1000 mA
AC characteristics Diode capacitance
CT
-
20
-
pF
VR = 5 V, f = 1 MHz
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAT 60B
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Reverse current IR = f (TA)
VR = 8V
10 0 A 10 -1
3200
mA
2400
10 -2
TS
IR
120 °C
IF
2000
10 -3
1600 10 -4 1200
TA
10 -5
800 10 -6
400
0 0
20
40
60
80
100
150
10 -7 -20
0
20
40
60
80
100 120 °C
160
TA,TS
TA
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 2 10 2
K/W
IFmax / IFDC
-
10 1
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
33
Sep-04-1998 1998-11-01
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