BAT 62-02W
Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies
2
1
VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BAT 62-02W
Marking Ordering Code L Q62702-A1028
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 ...+150 Unit V mA °C
VR IF Tj Tstg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 650 ≤ 810
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Jul-02-1998 1998-11-01
BAT 62-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1
Unit
IR VF
-
µA V
VR = 40 V
Forward voltage
I F = 2 mA
AC characteristics Diode capacitance
CT CC R0 Ls
-
0.35 0.09 225 0.6
0.6 -
pF
VR = 1 V, f = 1 MHz
Case capacitance
f = 1 MHz
Differential resistance kΩ nH
VR = 0 , f = 10 kHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-02-1998 1998-11-01
BAT 62-02W
Forward current IF = f (TA*;TS) * Package mounted on epoxy
50
mA
IF TA
30
TS
20
10
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 3 10 1
K/W
RthJS
IFmax / IFDC
10 2
-
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1 -7 10 10
-6
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconductor Group Semiconductor Group
33
Jul-02-1998 1998-11-01
BAT 62-02W
Forward current IF = f (V F)
T A = parameter
10 4
Leakage current I R = f (VR) TA = Parameter
10 3
uA
uA
T A = 125°C IF
10 3
TA = 25°C TA = 85°C TA = 125°C TA = -40°C
10
2
IR
T A = 85°C
10 1
10 2 10 0
T A = 25°C
10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
2.0
10 -1 0
5
10
15
20
25
30
V
40
VF
VR
Diode capacitance CT = f (V R) f = 1MHz
Rectifier voltage Vout = f (Vin)
f = 900 MHz RL = parameter in kΩ
10 4 mV 10 3
0.5
pF
CT
0.3
10 2
VO
10 1
10 0 0.2 10 -1 0.1 10 -2
1000 500 200 100 50 20
RL=10
0.0 0
5
10
15
20
V
30
10 -3 0 10
10
1
10
2
10
3
mV 10
4
VR
VI
Semiconductor Group Semiconductor Group
44
Jul-02-1998 1998-11-01
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