BAT64-05W

BAT 64...W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 2 1 VSO05561 BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W Marking Ordering Code 63s 64s 65s 66s Q62702-A1159 Q62702-A1160 Q62702-A1161 Q62702-A1162 Pin Configuration 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 Package SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Average forward current (50/60Hz, sinus) Surge forward current (t < 100µs) Total power dissipation Symbol Value 40 250 120 800 250 250 250 150 -55...+150 °C mW Unit V mA VR IF IFAV IFSM BAT 64W , TS≤120°C Ptot Total power dissipat. BAT64-04/06W , TS≤111°C Ptot Total power dissipation BAR 64-05W , T S≤104°C Ptot Junction temperature Storage temperature Tj Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - soldering point BAT 64-05W RthJA RthJA RthJA RthJS RthJS RthJS ≤255 ≤290 ≤455 ≤120 ≤155 ≤185 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 2 200 mV 320 385 440 570 350 430 520 750 µA Unit IR IR VF - VR = 30 V Reverse current VR = 30 V, TA = 85 °C Forward voltage I F = 1 mA I F = 10 mA I F = 30 mA I F = 100 mA AC characteristics Diode capacitance CT - 4 6 pF VR = 1 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter BAT 64... EHB00057 TA = Parameter BAT 64... EHB00058 ΙF 10 mA 2 ΙR 10 2 µA 10 1 TA = 125 C 10 1 85 C 10 0 TA = -40 25 85 125 C C C C 10 0 10 -1 25 C 10 -1 10 -2 10 -2 0 0.5 V 1 10 -3 0 10 20 V 30 VF VR Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) *Package mounted on epoxy BAT 64W 300 mA TS 200 TA IF 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) BAT 64W 10 K/W 3 Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) * Package mounted on epoxy BAT 64-04/06W 300 mA TS 200 TA IF 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) BAT 64-04/06 10 K/W 3 Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64-04/06W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 55 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) * Package mounted on epoxy BAT 64-05W 300 mA TS 200 IF TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f (tp) BAT 64-05W 10 K/W 3 Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64-05W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 66 Sep-07-1998 1998-11-01