BAT70-05

BAT 70-05 Silicon Schottky Diodes • Parallel connection for maximum IF per package • Low forward voltage drop • For power supply • For clamping and protection 4 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 70-05 Marking BAT 70-05 Ordering Code Pin Configuration Q62702-A1223 1 = A1 2 n.c. Package 3 = A2 4=C1/C2 SOT-223 Maximum Ratings Parameter Reverse voltage, TS < 75°C 1) Reverse voltage, TS < 50°C 1) Peak reverse voltage, T S < 70°C, t < 10ms 2) Forward current Average forward current (50/60Hz, sinus) Surge forward current (t< 100µs) Total power dissipation , T S ≤ 130 °C Symbol Value 50 70 70 1.5 1.5 5 1.5 3 150 - 65 ...+150 °C W A Unit V VR VR VRM IF I FAV I FSM Ptot Total power dissipation, both diodes , T S ≤ 120 °C Ptot Junction temperature Tj Storage temperature T stg 1) Maximum Ratings Junction - ambient RthJA RthJS ≤ 82 ≤12 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 2) see DC/pulse derating curve V R = f (T A) Semiconductor Group Semiconductor Group 11 Jun-02-1998 1998-11-01 BAT 70-05 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 10 60 1 100 1000 15 mA V 0.2 0.26 0.33 0.52 0.6 Unit IR VR = 50 V VR = 70 V Reverse current IR VF - VR = 50 V, TA = 75 °C Forward voltage I F = 1 mA I F = 10 mA I F = 100 mA I F = 1.5 A AC characteristics Diode capacitance CT 236 48.8 - pF VR = 0 V, f = 1 MHz VR = 10 V, f = 1 MHz Forward voltage V F = f (TA) for t p = 10ms and 100ms, Duty cycle < 1/100 80 V VR 60 50 40 30 20 tp =DC tp =100ms tp =10ms 10 0 0 20 40 60 80 100 120 °C 150 TA Semiconductor Group Semiconductor Group 22 Jun-02-1998 1998-11-01