BB 555
Silicon Tuning Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure
2
1
VES05991
Type BB 555 BB 555
Marking Ordering Code B B Q62702-B0864 Q62702-B0853 unmatched inline matched
Pin Configuration Package 1=C 2=A SCD-80
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 55 ...+150 55 ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-28-1998 1998-11-01
BB 555
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200
Unit
IR IR
-
nA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
17.5 14.1 2.05 1.9 18.7 15 2.24 2.1 6.7 8.9 20 16.1 2.4 2.3 7.5 9.8
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25 CT1/C T28
∆CT/C T
6 8.2
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching 1)
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence
Series resistance
-
0.15 0.25 0.58 0.6
1 2 Ω nH
rs Ls
-
VR = 3 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group Semiconductor Group
22
Jul-28-1998 1998-11-01
BB 555
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -3
20
pF
16
1/°C
CT
14 12 10 8 6 4 2 0 0
T Cc
10 -4
5
10
15
20
V
30
10 -5 0 10
10
1
V
10
2
VR
VR
Reverse current I R = f (VR) T A = Parameter
10 3
pA 85°C
Reverse current IR = f (TA)
VR = 28V
10 3
pA
IR
10 2
IR
10 2
25°C
10 1
10 1 10 0
10 -1 0 10
10
1
V
10
2
10 0 -30
-10
10
30
50
70
°C
100
VR
TA
Semiconductor Group Semiconductor Group
33
Jul-28-1998 1998-11-01
BB 555
Normalized diode capacitance
C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter
1.06
CTA / C25
1V
1.02
2V
25V
1.00
0.98
0.96 -30
-10
10
30
50
70
°C
110
TA
Semiconductor Group Semiconductor Group
44
Jul-28-1998 1998-11-01
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