BB565

BB 565 Silicon Variable Capacitance Diode • For UHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 565 BB 565 Marking Ordering Code C C Q62702-B0869 unmatched Q62702-B0873 in-line matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+150 -55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-13-1998 1998-11-01 BB 565 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200 Unit IR IR - nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 18.5 13.2 1.85 1.8 20 14.8 2.07 2 7.2 10 21.5 16.4 2.28 2.2 8.1 11 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6.3 9 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) % 0.5 0.7 0.6 0.6 1.5 2 Ω nH VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence Series resistance rs Ls - VR = 3 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-13-1998 1998-11-01 BB 565 Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 22 pF 18 1/°C CT 16 14 12 10 8 6 4 2 0 0 5 10 15 20 V T Cc 10 -4 30 10 -5 0 10 10 1 V 10 2 VR VR Reverse current I R = f (VR) T A = Parameter 10 4 pA Reverse current IR = f (TA) VR = 28V 10 4 pA 10 3 85°C IR 10 2 25°C IR 10 3 10 1 10 2 10 0 10 -1 0 10 10 1 V 10 2 10 1 -30 -10 10 30 50 70 °C 100 VR TA Semiconductor Group Semiconductor Group 33 Jul-13-1998 1998-11-01 BB 565 Normalized diode capacitance C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter 1.06 CTA / C25 1V 1.02 2V 25V 1.00 0.98 0.96 -30 -10 10 30 50 70 °C 110 TA Semiconductor Group Semiconductor Group 44 Jul-13-1998 1998-11-01