BB664

BB 664 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 664 BB 664 Marking Ordering Code 4 4 Q62702- B0909 (unmatched) Q62702- B0908 (in-lined matched) Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55.. ...+125 -55... ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-10-1998 1998-11-01 BB 664 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 100 nA Unit IR IR - VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 15.2 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) % Ω nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-10-1998 1998-11-01 BB 664 Diode capacitance CT = f (V R) f = 1MHz 40 pF 5 CT 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 VR Semiconductor Group Semiconductor Group 33 Jul-10-1998 1998-11-01