BB689

BB 689 Silicon Tuning Diode Preliminary data • For VHF 2-Band-hyperband-TV-tuners • Very high capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 689 BB 689 Marking Ordering Code E E Q62702-B0886 Q62702-B0890 unmached in-line matched Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 - 55 ...+150 - 55 ...+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Mar-11-1998 1998-11-01 BB 689 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA µA Unit IR IR - VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 0.6 61.5 47.2 3 2.9 17 23.2 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 CT1 /CT28 ∆CT/CT 14.5 18 - - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) % Ω nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 8 V, f = 470 MHz Series inductance chip to ground 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Mar-11-1998 1998-11-01 BB 689 Diode capacitance CT = f (V R) f = 1MHz 60 pF 50 CT 45 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 V 30 VR Semiconductor Group Semiconductor Group 33 Mar-11-1998 1998-11-01