BBY52-02W

BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 2 1 VES05991 Type BBY 52-02W Marking Ordering Code K Q62702-B0860 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-23-1998 1998-11-01 BBY 52-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100 Unit IR IR - nA VR = 6 V Reverse current VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 1.4 0.95 0.9 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.09 0.6 2.2 2 1.75 1.45 2.1 1.7 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T4 rs CC Ls 1.1 - Ω pF nH VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-23-1998 1998-11-01 BBY 52-02W Diode capacitance CT = f (V R) f = 1MHz Reverse current IR = f (VR) TA = 25 °C 45 pA 2.4 pF 2.0 CD 1.8 1.6 IR 35 30 25 1.4 20 1.2 15 1.0 0.8 0.6 0.4 1.0 10 5 0 0.0 1.5 2.0 2.5 3.0 V 4.0 1.0 2.0 3.0 4.0 5.0 V 7.0 VR VR Semiconductor Group Semiconductor Group 33 Jul-23-1998 1998-11-01