BBY 57-03W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs
2
1
VPS05176
Type BBY 57-03W
Marking 5 cathd.red
Ordering Code Q62702-B918
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -03-1998
BBY 57-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 1 100
Unit
IR IR
-
nA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics Diode capacitance
CT
16.5 4 17.5 8.7 7.1 4.73 2.45 3.7 0.3 0.09 0.6 18.6 5.5 4.5 -
pF
VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
3 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -03-1998
BBY 57-03W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -1
40
pF
1/°C
CT
30
T Cc
10 -2
25
20
15
10 -3
10
5 10 -4 0.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
4.0
0.5
1.0
1.5
2.0
2.5
3.0
V
4.0
VR
VR
Normalized diode capacitance
C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter
1.04
-
1V
CTA 1.02 /C 25°C
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -30
4V
-10
10
30
50
70
°C
100
TA
Semiconductor Group Semiconductor Group
33
Au 1998-11-01 -03-1998
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