BC847PN

BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration Type BC 847PN Marking Ordering Code 1Ps Q62702-C2374 Package NPN-Transistor SOT-363 PNP-Transistor 1=E 4=E 2=B 5=B 6=C 3=C Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 45 50 50 5 100 200 250 150 -65...+150 ≤275 ≤140 Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg RthJA RthJS mA mW °C K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 BC 847PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage Symbol min. Values typ. max. 15 5 nA µA 200 250 290 90 200 700 900 660 630 mV 300 650 750 820 V Unit V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE 45 50 50 5 - IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) VBEsat - IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) VBE(ON) 580 - IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1) Pulse test: t < 300 µs; D < 2% Semiconductor Group 2 May-12-1998 BC 847PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter AC Characteristics per Transistor Transition frequency Symbol min. Values typ. 250 2 10 4.5 2 330 30 max. kΩ 10-4 µS MHz pF Unit fT Ccb Ceb h11e h12e h21e h22e - IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Semiconductor Group 3 May-12-1998 BC 847PN Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 K/W 3 10 3 10 2 R thJS Ptotmax / PtotDC 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group 4 May-12-1998 BC 847PN Collector-base capacität CCB = f (VCBO ) Emitter-base capacität CEB = f (VEBO ) Transition frequency fT = f (IC ) VCE = 5V Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat ), hFE = 20 Semiconductor Group 5 May-12-1998 BC 847PN DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat ), hFE = 20 h parameter he = f (IC) normalized h parameter he = f (VCE ) normalized VCE = 5V IC = 2mA Semiconductor Group 6 May-12-1998