BCP53M

BCP 51M ... BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M...BCP 56M(NPN) 4 5 3 2 1 VPW05980 Type BCP 51M BCP 52M BCP 53M Marking Ordering Code Pin Configuration AAs AEs AHs Q62702-C2592 1 = B Q62702-C2593 Q62702-C2594 2=C 3=E 4 n.c. 5=C Package SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol BCP 51M BCP 52M BCP 53M Unit 45 45 5 60 60 5 80 100 5 V VCEO VCBO VEBO DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 77 °C Junction temperature Storage temperature IC I CM IB I BM Ptot Tj T stg 1 1.5 100 200 1.7 150 -65...+150 mA A mA W °C Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤98 ≤43 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BCP 51M ... BCP 53M Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. max. V 45 60 80 100 20 250 0.5 1 V nA µA Unit V(BR)CEO BCP 51M BCP 52M BCP 53M I C = 10 mA, I B = 0 Collector-base breakdown voltage V(BR)CBO BCP 51M BCP 52M BCP 53M 45 60 100 I C = 100 µA, IB = 0 Emitter-base breakdown voltage V(BR)EBO I CBO I CBO hFE hFE hFE VCEsat VBE(ON) 5 25 40 25 - I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) I C = 5 mA, V CE = 2 V DC current gain 1) I C = 150 mA, V CE = 2 V DC current gain 1) I C = 500 mA, V CE = 2 V Collector-emitter saturation voltage1) I C = 500 mA, IB = 50 mA Base-emitter voltage 1) I C = 500 mA, V CE = 2 V AC Characteristics Transition frequency fT - 100 - MHz I C = 50 mA, V CE = 10 V, f = 100 MHz 1) Pulse test: t ≤ 300µs, D = 2% Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -11-1998 BCP 51M ... BCP 53M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy DC current gain hFE = f (I C) VCE = 2V 10 3 BCP 51...53 EHP00261 2000 mW h FE 1600 1400 5 TS 10 2 100 C 25 C -50 C P tot 1200 5 1000 800 600 400 200 0 0 TA 10 1 5 20 40 60 80 100 120 °C 150 10 0 0 10 10 1 10 2 10 3 mA 10 4 TA,TS ΙC Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 RthJS 10 1 Ptotmax / PtotDC K/W - 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -11-1998 BCP 51M ... BCP 53M Collector cutoff current I CBO = f (T A) Transition frequency fT = f (IC) VCB = 30V BCP 51...53 EHP00262 VCE = 10 V 10 3 MHz max BCP 51...53 EHP00260 10 4 Ι CBO nA 10 3 fT 5 10 2 10 2 10 1 typ 5 10 0 10 -1 0 50 100 C 150 10 1 10 0 10 1 10 2 mA 10 3 TA ΙC Base-emitter saturation voltage Collector-emitter saturation voltage I C = f (VBEsat), hFE = 10 BCP 51...53 EHP00263 IC = f (VCEsat), h FE = 10 10 4 BCP 51...53 EHP00264 10 4 ΙC mA 10 3 100 C 25 C -50 C ΙC mA 10 3 5 100 C 25 C -50 C 10 2 10 2 5 10 1 10 1 5 10 0 0 0.2 0.4 0.6 0.8 V 1.2 10 0 0 0.2 0.4 0.6 V 0.8 V BEsat V CEsat Semiconductor Group Semiconductor Group 44 Au 1998-11-01 -11-1998