BCR135

BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 150 65...+150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group 1 Jun-18-1997 BCR 135 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. 10 0.21 max. 100 167 0.3 1 1.4 13 0.24 kΩ nA µA V V Unit V(BR)CEO V(BR)CBO ICBO IEBO hFE VCEsat Vi(off) Vi(on) R1 R1/R2 50 50 70 0.5 0.5 7 0.19 IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency fT Ccb - 150 3 - MHz pF IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300 µs; D < 2% Semiconductor Group 2 Jun-18-1997 BCR 135 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC ), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 10 -1 10 0 10 1 mA 10 0 0.0 0.2 0.4 0.6 V 1.0 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 IC 10 1 IC 10 -1 10 0 -2 10 10 -1 10 -1 10 0 10 1 10 V -3 0.0 0.5 1.0 V 2.0 Vi(on) Vi(off) Semiconductor Group 3 Jun-18-1997 BCR 135 Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 K/W 3 10 3 10 2 R thJS Ptotmax / PtotDC 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group 4 Jun-18-1997