BF2000

BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 3 4 2 1 VPS05178 Type BF 2000 Marking Ordering Code NDs Q62702-F1771 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Total power dissipation, T S = 76 °C Storage temperature Channel temperature Symbol Value 12 30 10 200 - 55 ...+150 150 mW °C Unit V mA VDS ID ±I G1/2SM Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BF 2000 Electrical Characteristics at TA = 25 °C; unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage Symbol min. Values typ. 0.3 0.2 max. 12 12 50 50 1 µA V V nA V V Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS ±I G1SS ±I G2SS 12 8 8 - I D = 10 µA, -VG1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S = 5 V, V G1S = 0 V, V DS = 0 V Drain current I DSS VG1S(p) VG2S(p) VDS = 5 V, V G1S = 0 , V G2S = 4 V Gate 1-source pinch-off voltage VDS = 5 V, V G2S = 4 V, I D = 200 µA Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BF 2000 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter min. AC characteristics Forward transconductance typ. 24 1.2 25 0.8 29 22 1.1 1 max. - Unit gfs Cg1ss Cg2ss Cdg1 Cdss G ps G ps F F ∆G ps 28 40 mS pF VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Feedback capacitance fF pF dB VDS = 8 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz Power gain VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 45 MHz Noise figure VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 800 MHz Gain control range VDS = 8 V, VG2S = 4 ... -2V, f = 800 MHz Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -03-1998