BF 2030W
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code Q62702-F1774
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF 2030W NEs
Maximum Ratings Parameter Drain-source voltage
Symbol
Value 14 40 10 7 200 -55 ...+150 150
Unit V mA V mW °C
VDS ID
±I G1/2SM +VG1SE
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S = 94 °C Storage temperature Channel temperature
Ptot T stg T ch
Thermal Resistance Channel - soldering point
Rthchs
≤280
K/W
Semiconductor Group Semiconductor Group
11
Jun-05-1998 1998-11-01
BF 2030W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Drain-source breakdown voltage Symbol min. Values typ. 12 8.5 8.5 max. 50 50 12 0.8 0.7 µA mA V V nA V Unit
V(BR)DS
+V(BR)G1SS +V(BR)G2SS +I G1SS +I G2SS
0.3 0.3
I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 - source breakdown voltage
+I G1S = 10 mA, V G2S = 0 V, V DS = 0 V Gate 2 - source breakdown voltage ±I G2S = 10 mA, V G1S = V DS = 0 Gate 1 source current
VG1S = 5 V, V G2S = 0 V
Gate 2 source leakage current
VG2S = 5 V, V G1S = 0 V, V DS = 0 V
Drain current
I DSS I DSX VG2S(p) VG1S(p)
VDS = 5 V, V G1S = 0 V, VG2S = 4 V
Drain-source current
VDS = 5 V, V G2S = 4 V, RG1 = 20 kΩ
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
Gate 1-source pinch-off voltage
VDS = 5 V, V G2S = 4 V, I D = 20 µA
AC characteristics Forward transconductance
g fs Cg1ss
-
31 2.5
-
mS pF
VDS = 5 V, ID = 10 mA, V G2S = 4 V
Gate 1 input capacitance
VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz
Output capacitance
Cdss
-
1.1
-
VDS = 5 V, ID = 10 mA, V G2S = 4 V, f = 1 MHz
Noise figure
F
-
2
-
dB
VDS = 5 V, ID = 10 mA, f = 800 MHz
Semiconductor Group Semiconductor Group 22
Jun-05-1998 1998-11-01
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