BF995

Silicon N Channel MOSFET Tetrode q BF 995 For input and mixer stages in FM and VHF TV tuners Type BF 995 Marking MB Ordering Code (tape and reel) Q62702-F936 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TS < 76 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID ± Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch – 55 … + 150 ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BF 995 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VG1S = – VG2S = 4 V Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS ± ± ± ± Values typ. max. Unit 20 8.5 8.5 – – 4 – – – – – – – – – – – 14 14 50 50 20 2.5 2.0 V V(BR) G1SS V(BR) G2SS IG1SS IG2SS nA IDSS – VG1S (p) – VG2S (p) mA V Semiconductor Group 2 BF 995 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC Characteristics Forward transconductance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Feedback capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS 2 ∆f = 12 MHz (see test circuit 1) Noise figure VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (see test circuit 1) Gain control range VDS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz (see test circuit 1) Mixer gain (additive) VDS = 15 V, VG2S = 6 V, RS = 220 Ω f = 200 MHz, f IF = 36 MHz 2 ∆fIF = 5 MHz, Vosc = 0.5 V (see test circuit 2) Mixer gain (multiplicative) VDS = 15 V, VG1S = 1.7 V, VG2S = 2.5 V RS = 220 Ω, f = 200 MHz, f IF = 36 MHz 2 ∆fIF = 5 MHz, Vosc = 2 V (see test circuit 3) gfs Cg1ss Cg2ss Cdg1 Cdss Gps 12 – – – – – 17 3.6 1.6 25 1.6 23 – – – – – – fF pF dB mS pF Values typ. max. Unit F – 1.1 – ∆ Gps – 50 – Gpsc – 16 – Gpsc – 18 – Semiconductor Group 3 BF 995 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) VG2S = 4 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Semiconductor Group 4 BF 995 Drain current ID = f (VG1S) VDS = 15 V Gate 1 input capacitance Cg1ss = f (VG1S) VG2S = 4 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Gate 2 input capacitance C g2ss = f (VG2S) VG1S = 0 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VG1S = 0 V, VG2S = 4 V IDSS = 10 mA, f = 1 MHz Semiconductor Group 5 BF 995 Gate 1 input admittance y11s VDS = 15 V, VG2S = 4 V (common source) Gate 1 forward transfer admittance y21s VDS = 15 V, VG2S = 4 V (common source) Output admittance y22s VDS = 15 V, VG2S = 4 V (common source) Semiconductor Group 6 BF 995 Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Interference voltage for 1% cross modulation Vint (1%) = f (∆Gps)1) VDS = 15 V, VG1S = 0, f = 200 MHz fint = 221 MHz (see test circuit 1) Interference voltage for 1% cross modulation Vint (1%) = f (fint)1) VDS = 15 V, VG2S = 4 V, VG1S = 0 f = 200 MHz (see test circuit 1) 1) For footnote refer to the last page of this data sheet. Semiconductor Group 7 BF 995 Mixer gain (additive) Gpsc = f (Vosc) VD = 15 V, VG1S = 0, VG2S = 6 V RS = 220 Ω, IDSS = 10 mA, f = 200 MHz fIF = 36 MHz (see test circuit 2) Mixer gain (additive) Gpsc = f (VG2S) VD = 15 V, VG1S = 0, RS = 220 Ω Vosc = 0.5 V, IDSS = 10 mA, f = 200 MHz fIF = 36 MHz (see test circuit 2) Mixer gain (additive) Gpsc = f (RS) VD = 15 V, VG1S = 0, VG2S = 6 V Vosc = 0.5 V, f = 200 MHz f IF = 36 MHz (see test circuit 2) Mixer gain (multiplicative) Gpsc = f (VG2S) VD = 15 V, VG1S = 1.7 V, RS = 200 Ω IDSS = 10 mA, f = 200 MHz f IF = 36 MHz (see test circuit 3) Semiconductor Group 8 BF 995 Test circuit 1 for power gain, noise figure and cross modulation f = 200 MHz, GG = 2 mS, GL = 0.5 mS Test circuit 2 for mixer gain (additive) f = 200 MHz, fosc = 236 MHz, 2 ∆f F = 5 MHz I Semiconductor Group 9 BF 995 Test circuit 3 for mixer gain (multiplicative) f = 200 MHz, fosc = 236 MHz, 2 ∆fIF = 5 MHz 1) Vint (1%) is the rms value of half the emf (terminal voltage at matching) of a 100 % sine modulated TV carrier at an internal generator resistance of 60 Ω, causing 1 % amplitude modulation on the active carrier. Semiconductor Group 10