BFQ72

BFQ72

  • 厂商:

    SIEMENS(西门子)

  • 封装:

  • 描述:

    BFQ72 - NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector ...

  • 详情介绍
  • 数据手册
  • 价格&库存
BFQ72 数据手册
NPN Silicon RF Transistor q q q q BFQ 72 For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. Hermetically sealed ceramic package. HiRel/Mil screening available. CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 72 Marking 72 Ordering Code (tape and reel) Q62702-F776 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 112 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS ≤ ≤ Symbol VCE0 VCES VCB0 VEB0 IC IB Ptot Tj TA Tstg Values 15 20 20 2.5 50 10 350 175 – 65 … + 175 – 65 … + 175 Unit V mA mW ˚C 260 180 K/W For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) BFQ 72 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 25 mA, VCE = 5 V IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA Base-emitter voltage IC = 25 mA, VCE = 5 V V(BR)CE0 ICES ICB0 IEB0 hFE 40 40 VCEsat VBE – – 90 – 0.15 0.78 200 – 0.4 – V 15 – – – – – – – – 10 50 10 V µA Values typ. max. Unit nA µA – BFQ 72 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 25 mA, VCE = 5 V, f = 200 MHz IC = 50 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 75 Ω IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω Power gain IC = 25 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt Transducer gain IC = 25 mA, VCE = 8 V, f = 1 GHz, Z0 = 50 Ω Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 8 V, dIM = 60 dB f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω Third order intercept point IC = 25 mA, VCE = 8 V, f = 800 MHz fT – – Ccb Cce Cibo Cobs F – – Gpe – 1.7 2.5 18 – – – – – – – 5.1 4.7 0.55 0.4 2.1 0.95 – – 0.7 – – 1.5 dB pF GHz Values typ. max. Unit I S21e I 2 – 12.5 240 – – mV Vo1 = Vo2 – IP3 – 30.5 – dBm BFQ 72 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Transition frequency fT = f (IC) VCE = 5 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz BFQ 72 Common Emitter Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG Γopt ANG RN N – F50 Ω dB G p(F50Ω) dB IC = 2 mA, VCE = 8 V, Z0 = 50 Ω 0.01 1.0 – (ZS = 150 Ω) – – 1.6 – IC = 10 mA, VCE = 8 V, Z0 = 50 Ω 0.01 0.8 1.5 2.3 – 14.7 (ZS = 90 Ω) 0.26 99.5 – 16.5 – 0.31 1.7 2.45 – 14 Noise figure F = f (ZS) VCE = 8 V, f = 10 MHz BFQ 72 Circles of constant noise figure F = f (ZS) in ZS-plane, IC = 10 mA, VCE = 8 V, f = 800 MHz Noise figure F = f (IC) Power gain G = f (IC) VCE = 8 V, f = 800 MHz, ZLopt (G) BFQ 72 Common Emitter Power Gain Power gain Gms,  S21e 2 = f (IC) VCE = 8 V, f = 200 MHz, Z0 = 50 Ω Power gain Gma, Gms,  S21e 2 = f (IC) VCE = 8 V, f = 500 MHz, Z0 = 50 Ω Power gain Gma,  S21e 2 = f (IC) VCE = 8 V, f = 800 MHz, Z0 = 50 Ω Power gain Gma,  S21e 2 = f (IC) VCE = 8 V, f = 1.5 GHz, Z0 = 50 Ω BFQ 72 Power gain Gma, Gms,  S21e 2 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 Ω Power gain Gma, Gms,  S21e 2 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 Ω Power gain Gma, Gms,  S21e 2 = f (f) IC = 40 mA, VCE = 8 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 15 mA, VCE = 5 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.62 0.57 0.56 0.57 0.57 0.58 0.58 0.59 0.59 0.61 0.63 0.64 0.67 – 78 – 121 – 142 – 155 – 169 – 179 174 167 159 153 149 138 128 26.97 17.54 12.39 9.59 6.47 4.86 3.89 3.28 2.64 2.20 1.99 1.63 1.38 137 114 102 94 84 76 69 63 54 46 41 28 16 0.023 0.032 0.039 0.043 0.053 0.064 0.075 0.086 0.102 0.119 0.128 0.153 0.177 59 47 44 45 48 50 50 50 48 46 44 40 34 0.76 0.51 0.38 0.31 0.24 0.21 0.19 0.18 0.17 0.17 0.17 0.17 0.19 – 34 – 50 – 55 – 56 – 57 – 59 – 60 – 63 – 67 – 75 – 82 – 100 – 119 S11, S22 = f (f) IC = 15 mA, VCE = 5 V, Z0 = 50 Ω S12, S21 = f (f) IC = 15 mA, VCE = 5 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 25 mA, VCE = 5 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.54 0.55 0.55 0.57 0.57 0.58 0.59 0.60 0.60 0.61 0.63 0.65 0.68 – 99 – 137 – 154 – 164 – 176 176 170 165 157 151 147 137 127 31.95 19.18 13.20 10.09 6.76 5.06 4.04 3.40 2.74 2.28 2.06 1.68 1.42 130 108 98 91 82 74 68 62 54 46 41 29 17 0.018 0.027 0.032 0.037 0.049 0.061 0.072 0.084 0.101 0.118 0.127 0.153 0.177 57 48 49 52 55 56 55 55 52 49 47 42 36 0.66 0.42 0.30 0.24 0.19 0.17 0.15 0.14 0.14 0.14 0.14 0.14 0.17 – 41 – 55 – 59 – 60 – 60 – 61 – 63 – 66 – 70 – 79 – 87 – 106 – 126 S11, S22 = f (f) IC = 25 mA, VCE = 5 V, Z0 = 50 Ω S12, S21 = f (f) IC = 25 mA, VCE = 5 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 50 mA, VCE = 5 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.51 0.55 0.55 0.58 0.59 0.60 0.61 0.62 0.62 0.64 0.66 0.67 0.70 – 126 – 154 – 166 – 173 178 172 167 162 155 149 145 136 126 34.20 18.99 12.81 9.72 6.47 4.84 3.86 3.25 2.62 2.18 1.97 1.61 1.37 121 103 94 88 80 73 67 62 53 45 41 29 18 0.014 0.021 0.026 0.032 0.045 0.057 0.069 0.080 0.097 0.114 0.123 0.149 0.174 54 53 57 59 62 61 60 59 56 53 51 46 40 0.55 0.33 0.25 0.21 0.18 0.17 0.16 0.15 0.15 0.15 0.15 0.15 0.17 – 46 – 52 – 52 – 51 – 50 – 52 – 55 – 59 – 65 – 74 – 83 – 104 – 125 S11, S22 = f (f) IC = 50 mA, VCE = 5 V, Z0 = 50 Ω S12, S21 = f (f) IC = 50 mA, VCE = 5 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 10 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.69 0.61 0.57 0.56 0.55 0.55 0.56 0.56 0.57 0.58 0.60 0.62 0.65 – 59 – 100 – 124 – 140 – 159 – 171 – 179 173 164 157 152 141 131 22.59 16.18 11.90 9.39 6.42 4.86 3.90 3.29 2.66 2.21 2.00 1.64 1.39 145 121 108 99 87 78 71 65 55 46 41 28 17 0.023 0.036 0.042 0.046 0.055 0.064 0.073 0.082 0.096 0.110 0.119 0.141 0.162 63 49 44 43 44 45 46 46 45 44 42 39 35 0.85 0.64 0.51 0.43 0.36 0.33 0.31 0.30 0.29 0.29 0.28 0.28 0.28 – 24 – 37 – 41 – 43 – 43 – 44 – 46 – 48 – 52 – 59 – 64 – 78 – 95 S11, S22 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 25 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.55 0.53 0.52 0.54 0.54 0.55 0.56 0.56 0.57 0.59 0.61 0.62 0.66 – 90 – 131 – 150 – 160 – 172 179 172 167 159 153 149 139 129 32.99 20.17 13.96 10.71 7.17 5.38 4.29 3.62 2.91 2.42 2.18 1.78 1.51 132 110 99 92 83 75 69 63 54 47 42 30 18 0.017 0.024 0.030 0.035 0.046 0.057 0.067 0.078 0.094 0.109 0.119 0.142 0.165 56 50 50 53 56 57 56 55 53 50 48 44 39 0.71 0.46 0.36 0.30 0.26 0.24 0.23 0.22 0.22 0.22 0.21 0.21 0.22 – 35 – 44 – 45 – 44 – 43 – 43 – 45 – 47 – 51 – 59 – 65 – 80 – 98 S11, S22 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 Ω BFQ 72 Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 40 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 0.51 0.52 0.53 0.54 0.55 0.56 0.57 0.58 0.59 0.60 0.62 0.64 0.67 – 108 – 144 – 159 – 167 – 177 176 170 165 157 152 148 138 128 35.70 20.53 13.96 10.64 7.10 5.32 4.24 3.57 2.87 2.39 2.16 1.77 1.50 126 105 96 90 81 74 68 63 54 46 42 29 18 0.016 0.021 0.027 0.032 0.043 0.054 0.066 0.076 0.092 0.107 0.116 0.140 0.163 57 52 55 57 60 60 59 58 56 52 51 46 41 0.64 0.41 0.32 0.28 0.25 0.24 0.23 0.22 0.22 0.22 0.21 0.21 0.22 – 37 – 42 – 41 – 39 – 38 – 39 – 41 – 44 – 49 – 57 – 63 – 79 – 98 S11, S22 = f (f) IC = 40 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 40 mA, VCE = 8 V, Z0 = 50 Ω
BFQ72
1. 物料型号: - 型号为 BFQ72。

2. 器件简介: - BFQ72是一款NPN型硅射频晶体管,适用于低失真宽带放大器,工作频率高达2GHz,集电极电流从10mA至30mA。该器件采用密封陶瓷封装,可提供HiRel/Mil筛选,并提供CECC型号:CECC 50002/263。

3. 引脚分配: - 引脚配置为B(基极)、E(发射极)、C(集电极)。

4. 参数特性: - 最大额定值包括:集电极-发射极电压15V,集电极-基极电压20V,发射极-基极电压2.5V,集电极电流50mA,基极电流10mA,总功率耗散350mW,结温175°C,环境温度范围-65°C至+175°C,存储温度范围-65°C至+175°C。 - 热阻:结-环境≤260°C/W,结-焊接点≤180°C。

5. 功能详解: - 直流特性包括:集电极-发射极击穿电压、集电极-发射极截止电流、集基截止电流、发射基截止电流、直流电流增益等。 - 交流特性包括:过渡频率、集基电容、集发电容、输入电容、输出电容、噪声系数、功率增益、互调测试、三阶截取点等。

6. 应用信息: - 适用于低失真宽带放大器,工作频率高达2GHz,集电极电流从10mA至30mA。

7. 封装信息: - 封装类型为Cererc-X,尺寸为15mm×16.7mm×0.7mm,安装在氧化铝上。
BFQ72 价格&库存

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