BFY181

HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 BFY 181 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 181 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1607 Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1715 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS £ 137 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2) 1) 2) 2) Maximum Ratings Symbol Limit Values 12 20 20 2 20 2 1) Unit V V V V mA mA mW °C °C °C K/W VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS 175 200 - 65 É + 200 - 65 É + 200 < 360 The maximum permissible base current for VFBE measurements is 15 mA (spot-measurement duration < 1 s). TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Draft A04 1998-04-01 BFY 181 Electrical Characteristics Table 2 Parameter Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0.1 mA 3) Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 Base-emitter forward voltage IE = 15 mA, IC = 0 DC current gain IC = 5 mA, VCE = 6 V 3) DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 100 max. 100 100 50 25 0.5 1 175 mA mA nA mA mA V 55 Unit ICBO ICEX ICBO IEBO IEBO VFBE hFE This test assures V(BR)CE0 > 12 V. Semiconductor Group 2 Draft A04 1998-04-01 BFY 181 Table 3 Parameter AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 7.5 8 0.21 0.34 0.45 2.2 max. GHz 6.5 0.29 0.6 2.9 pF pF pF dB Unit Transition frequency fT IC = 10 mA, VCE = 5 V, f = 500 MHz IC = 10 mA, VCE = 8 V, f = 500 MHz CCB Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance CCE VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance CEB VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz Noise figure IC = 4 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain IC = 10 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 5 V, f = 2 GHz, ZS = ZL = 50 W 4) F Gma 4) ½S21e½2 13.5 14.5 - dB 10 11 - dB G ma = S21 ( k Ð k Ð 1 ), G ms = S21 ------------------S12 S12 2 Semiconductor Group 3 Draft A04 1998-04-01 BFY 181 Order Instructions Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: QÉ BFY181 (x) (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1715 BFY181 ES For BFY181 in ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de Semiconductor Group 4 Draft A04 1998-04-01 BFY 181 1.05 ±0.25 1.02 ±0.1 2 0.76 0.5 ±0.1 XY 3 4 1.78 4.2 -0.2 1 0.1 +0.05 -0.03 GXM05552 Figure 1 Micro-X1 Package Semiconductor Group 5 ø1.65 ±0.1 Draft A04 1998-04-01