BGA 312
Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz
1 RF OUT/Bias
3 4 2 1
VPS05178
RF IN
3
Circuit Diagram
2, 4
EHA07312
GND
Type
Marking Ordering Code Q62702-G0042
Pin Configuration 1 RFout/bias 2 GND 3 RFinput
Package 4 GND SOT-143
BGA 312 BMs
Maximum Ratings Parameter Device current
Symbol
Value 60 250 10 150 -65 ...+150 -65 ...+150
Unit mA mW dBm °C
ID Ptot PRFin Tj TA T stg
1)
Total power dissipation, T S ≤ 99 °C
RF input power
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point
RthJS
≤ 205
K/W
1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BGA 312
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics (VD = 4.7 V, Zo = 50 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 12 11 10 +-0.6 dB Symbol min. Values typ. max. Unit
f = 0.1 GHz f = 1 GHz f = 1.8 GHz
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
Noise figure
NF
5.5 6 7 9 20 14 dBm dB
f = 0.1 GHz f = 1 GHz f = 2 GHz
1dB compression point
P-1dB RL in RL out
f = 1 GHz
Return loss input
f = 0.1 GHz to 2 GHz
Return loss output f = 0.1 GHz to 3 GHz
Typical biasing configuration
min. VCC = 7 V
R Bias
ΙD
RFC (optional) 4 3 2
EHA07313
Semiconductor Group Semiconductor Group 22
C Block
IN
1
C Block VD
OUT
RBias = VCC - VD / ID
VD = 4.7V
Sep-04-1998 1998-11-01
BGA 312
S-Parameters at T A = 25 °C
f
GHz
S11
MAG ANG MAG
S21
ANG MAG
S12
ANG MAG
S22
ANG
VD = 4.7 V, Z o = 50 Ω 0.01 0.009 17.9 0.1 0.012 43.5 0.3 0.027 55.8 0.5 0.039 52.5 0.8 0.049 33.7 1 0.046 22.2 1.8 0.054 -135.4 2.4 0.147 179.9 3 0.24 152.1
3.94 3.95 3.93 3.89 3.79 3.69 3.13 2.63 2.19
179.2 174.4 163.4 152.2 135.8 124.9 84.1 57.6 35.7
0.131 0.131 0.133 0.136 0.142 0.149 0.181 0.205 0.225
0.2 1.7 4.8 7.8 11.7 13.8 16.6 14.7 11.6
0.208 0.207 0.204 0.201 0.194 0.191 0.183 0.182 0.184
-0.5 -6.2 -19.1 -31.9 -51.3 -64.2 -106.8 -124.9 -134.9
Insertion power gain |S21|2 = f ( f )
Noise figure NF = f ( f ) VD = 4.7 V, ID = 42 mA
10
VD = 4.7 V, ID = 42 mA
25
dB
dB
|S21|2
15
NF
0 1
6
10
4
5
2
0 -1 10
10
GHz
10
0 -1 10
10
0
GHz
10
1
f
f
Semiconductor Group Semiconductor Group
33
Sep-04-1998 1998-11-01
BGA 312
Output power 1-dB-gain compression
P-1dB = f ( f ) VD = 4.7 V, I D = 42 mA
25
dBm
P -1dB
15
10
5
0 -1 10
10
0
GHz
10
1
f
Semiconductor Group Semiconductor Group
44
Sep-04-1998 1998-11-01
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