BS170

BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BS 170 Type BS 170 Pin 2 G Marking BS 170 Pin 3 D VDS 60 V ID 0.3 A RDS(on) 5Ω Package TO-92 Ordering Code Q67000-S076 Tape and Reel Information E6288 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 60 60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.3 TA = 25 °C DC drain current, pulsed IDpuls 1.2 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BS 170 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.05 1 2.5 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.5 5 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 10 nA Ω 5 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.2 A Semiconductor Group 2 12/05/1997 BS 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.12 0.18 40 15 5 - S pF 60 25 10 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Rise time tr 8 12 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Turn-off delay time td(off) 12 16 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Fall time tf 17 22 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BS 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.9 0.3 1.2 V 1.2 Values typ. max. Unit TA = 25 °C Inverse diode direct current,pulsed ISM - TA = 25 °C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.5 A Semiconductor Group 4 12/05/1997 BS 170 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.32 0.70 W 0.60 A Ptot 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 ID 0.24 0.20 0.16 0.12 0.08 0.15 0.10 0.05 0.00 0 0.04 0.00 0 20 40 60 80 100 120 °C 160 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BS 170 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.70 A 0.60 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 16 Ptot = 1W lkj i h VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 Ω g a b c d e ID 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 RDS (on) 12 c d 10 f e f g 8 e h i j 6 dk l 4 2 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 6.0 g 7.0 h i j 8.0 9.0 10.0 c f hj ig 0.10 0.05 b a 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0.75 A 0.65 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.30 S 0.26 ID 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 gfs 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00 1 2 3 4 5 6 7 8 V VGS 10 0.10 0.20 0.30 0.40 0.50 A ID 0.65 Semiconductor Group 6 12/05/1997 BS 170 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.2 A, VGS = 10 V 13 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 11 RDS (on) 10 9 8 7 VGS(th) 3.6 3.2 2.8 98% 6 5 2.4 98% 2.0 1.6 typ 4 3 2 1 0 -60 -20 20 60 100 °C 160 typ 1.2 2% 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 1 pF C 10 2 A IF 10 0 Ciss 10 1 Coss 10 - 1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997