BSM121AR

SIMOPAC® Module BSM 121 AR VDS = 200 V ID = 130 A R DS(on) = 20 mΩ q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 121 AR Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-S1014-A2 Symbol Values 200 200 ± 20 130 390 – 55 … + 150 700 ≤ 0.18 ≤ 0.05 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Rth CH Vis – – – – Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 ˚C Pulsed drain current, TC = 25 ˚C Operating and storage temperature range Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Case-heat sink Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A ˚C W K/W Vac mm – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 31 03.96 BSM 121 AR Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 80 A Dynamic Characteristics Forward transconductance Values typ. max. Unit V(BR)DSS 200 – 3.0 – 4.0 V VGS(th) 2.1 I DSS – – 50 300 10 18 250 1000 µA IGSS – 100 nA mΩ – 20 RDS(on) VDS ≥ 2 × ID × RDS(on)max., ID = 80 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 Ω Turn-off time toff (toff = td (off) + tf) VCC = 100 V, VGS = 10 V ID = 80 A, RGS = 3.3 Ω gfs Ciss Coss Crss td (on) tr td (off) tf 60 – – – – – – – 75 10 3 0.7 120 60 240 40 – 13 4.5 1.0 – – – – S nF ns Semiconductor Group 32 BSM 121 AR Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 ˚C Pulsed reverse drain current TC = 25 ˚C Diode forward on-voltage IF = 260 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V Values typ. max. Unit IS – – – 1.05 400 4.3 130 390 A ISM – VSD – 1.4 V ns – – µC – – trr Qrr Semiconductor Group 33 BSM 121 AR Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: = 80 µs pulse test Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: = 80 µs pulse test, VDS = 25 V Semiconductor Group 34 BSM 121 AR Continuous drain-source current ID = f (TC) parameter: VGS ≥ 10 V, T j = 150 ˚C Drain-source breakdown voltage V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚ C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 80 A; VGS = 10 V (spread) Typical capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 35 BSM 121 AR Forward characteristics of reverse diode IF = f (VSD) parameter: Tj, tp = 80 µs (spread) Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Semiconductor Group 36 BSM 121 AR Typ. gate charge VGS = f (Qgate) parameter: IDpuls = 200 A Semiconductor Group 37