BSP 123
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 G Type BSP 123 Type BSP 123 Pin 2 D Pin 3 S Pin 4 D
VDS
100 V
ID
0.38 A
RDS(on)
6Ω
Package SOT-223
Marking BSP 123
Ordering Code Q67000-S306
Tape and Reel Information E6327
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
± 14 ± 20 A 0.38
TA = 29 °C
DC drain current, pulsed
IDpuls
0.68
TA = 25 °C
Power dissipation
Ptot
1.7
W
TA = 25 °C
Semiconductor Group
1
Sep-12-1996
BSP 123
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
100 1.5 0.1 10 10 4 6 2 1 100 10 50
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 6 10
VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.38 A VGS = 4.5 V, ID = 0.38 A
Semiconductor Group
2
Sep-12-1996
BSP 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.08 0.28 65 10 4 -
S pF 85 15 6 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.38 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Rise time
tr
5 8
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Turn-off delay time
td(off)
10 13
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Fall time
tf
12 16
VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω
Semiconductor Group
3
Sep-12-1996
BSP 123
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 1 0.38 1.5 V 1.3 Values typ. max. Unit
ISM VSD
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 0.76 A, Tj = 25 °C
Semiconductor Group
4
Sep-12-1996
BSP 123
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.40 A
2.0 W
Ptot
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160
ID
0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
10 2 K/W 10 1
ZthJC
10 0
10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01
10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10
tp
Semiconductor Group
5
Sep-12-1996
BSP 123
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.9 A
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
19
Ptot = 2W
k l ji h g
VGS [V] a 2.0
b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
Ω
16
a
b
c
d
e
f
ID
0.7 0.6
f
RDS (on)
14 12 10 8 6 4 2 0
VGS [V] =
a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0
d e f g
0.5 0.4 0.3
d e
h i j k l
0.2 0.1 0.0 0 2 4 6 8
g h ij k
c
b a
V
11
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
A
0.9
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs,
1.0 A
0.40
S
ID
0.8 0.7 0.6 0.5 0.4 0.3
gfs
0.30
0.25
0.20
0.15
0.10 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6
VGS
A ID
0.8
Semiconductor Group
6
Sep-12-1996
BSP 123
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.38 A, VGS = 10 V
15
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
13
RDS (on) 12
11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 °C 160
VGS(th)
3.6 3.2 2.8
98%
2.4
98%
2.0
typ
1.6 1.2
typ
2%
0.8 0.4 0.0 -60 -20 20 60 100 °C 160
Tj
Tj
Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 1
pF C 10 2
A
IF
10 0
Ciss
10 1
Coss
10 -1
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
Crss
10 0 0
5
10
15
20
25
30
V VDS
40
10 -2 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
Sep-12-1996
BSP 123
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C
120 V 116 1 V(BR)DSS 14 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160
Tj
Semiconductor Group
8
Sep-12-1996
BSP 123
Package outlines SOT-223 Dimensions in mm
Semiconductor Group
9
Sep-12-1996