BSP125

BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSP 125 Type BSP 125 BSP 125 Pin 2 D Pin 3 S Pin 4 D VDS 600 V ID 0.12 A RDS(on) 45 Ω Package SOT-223 Marking BSP 125 Ordering Code Q62702-S654 Q67000-S284 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.12 TA = 39 °C DC drain current, pulsed IDpuls 0.48 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 600 2 10 8 10 30 2.5 100 50 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS nA µA nA Ω 45 VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.12 A Semiconductor Group 2 Sep-12-1996 BSP 125 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.18 95 9 4 - S pF 130 14 6 ns 5 8 VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Turn-off delay time td(off) 16 21 VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 125 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 0.9 300 0.82 0.12 0.48 V 1.3 ns µC - ISM VSD trr Qrr TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 0.24 A, Tj = 25 °C Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 Sep-12-1996 BSP 125 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.13 A 0.11 2.0 W Ptot 1.6 1.4 1.2 1.0 ID 0.10 0.09 0.08 0.07 0.06 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 0.05 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 125 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.28 A 0.24 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 140 Ptot = 2W k lj ihf g Ω e d VGS [V] a b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 a b 120 ID 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16 a b c RDS (on) 110 100 90 80 70 60 50 40 30 20 V [V] = GS 10 0 a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 c d e f g h i j k l c d e g fh k ji V 24 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 0.22 A 0.25 ID 0.18 0.16 0.14 gfs S 0.15 0.12 0.10 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 0.05 VGS ID Semiconductor Group 6 Sep-12-1996 BSP 125 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.12 A, VGS = 10 V 110 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 90 80 VGS(th) 3.6 3.2 70 2.8 60 50 40 30 20 10 0 -60 -20 20 60 100 °C 160 98% typ 98% 2.4 2.0 typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 2% 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 0 pF C 10 2 A IF Ciss 10 -1 10 1 10 -2 Coss Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 125 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 125 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996