BSP171P

BSP 171 P Preliminary data SIPMOS® Power Transistor • -Channel P • nhancement E mode • valanche rated A • ogic Level L • v/dt rated d Pin 1 G Type BSP 171 P VDS -60 V ID RDS(on) Pin2/4 D Pin 3 S -1.8 A 0.3 Ω Package Ordering Code @ VGS VGS = -10 V P-SOT223-4-1 Q67041-S4019 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current T A = 25 °C T A = 100 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse ID = -1.8 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.8 A, V DD ≤V(BR)DSS, di/dt = 100 A/µs, T jmax = 150 °C Gate source voltage Power dissipation, TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg IAR EAR dv/dt EAS ID puls ID Value -1.8 -1.15 -7.2 70 -1.8 0.18 6 Unit A mJ A mJ KV/µs ±14 1.8 -55 ...+150 -55 ...+150 55/150/56 V W °C Semiconductor Group 1 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4) Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling areaF) RthJS RthJA RthJA tbd tbd 70 Symbol min. Values typ. tbd max. tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA, Tj = 25 °C Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = -40 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.5 V, ID = -1.5 A VGS = -10 V, ID = -1.8 A RDS(on) 0.3 0.21 0.45 0.3 Ω IGSS VGS(th) IDSS -0.1 -10 -0.1 -1 -100 -100 nA -1 -1.5 -2 µA V(BR)DSS -60 V Semiconductor Group 2 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = -1.8 A Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Rise time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω Fall time VDD = -30 V, VGS = -10 V, ID = -1.8 A, RG = 6 Ω tf 75 115 td(off) 200 300 tr 30 45 td(on) 13 20 ns Crss 40 50 gfs Ciss Coss Symbol min. 1 Values typ. 3 365 105 max. 460 135 S pF Unit Semiconductor Group 3 04 / 1998 BSP 171 P Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Gate charge at threshold VDD = -24 V, ID≥ -0,1 A, VGS = 0 to - 1 V Gate charge at Vgs=5V VDD = -24 V, ID = -1.8 A , VGS = 0 to -5 V Gate charge total VDD = -24 V, ID = -1.8 A, VGS = 0 to -10 V Gate plateau voltage VDD = -24 V, ID = -1.8 A V(plateau) 2.8 V Qg(5) Qg 8 14 12 21 nC QG(th) Symbol min. Values typ. 0.6 max. 0.9 nC Unit Reverse Diode Inverse diode continuous forward current T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -3.6 A Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , di F/dt = 100 A/µs trr Qrr 100 0.2 150 0.3 ns µC VSD -0.95 -1.2 V ISM -7.2 IS -1.8 A Semiconductor Group 4 04 / 1998 BSP 171 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. 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Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the Semiconductor Group 5 04 / 1998