BSP297

BSP 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSP 297 Type BSP 297 Pin 2 D Pin 3 S Pin 4 D VDS 200 V ID 0.65 A RDS(on) 2Ω Package SOT-223 Marking BSP 297 Ordering Code Q67000-S068 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 200 200 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.65 TA = 25 °C DC drain current, pulsed IDpuls 2.6 TA = 25 °C Power dissipation Ptot 1.8 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 297 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.4 0.1 8 10 1.6 2 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 2 3.3 VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.65 A VGS = 4.5 V, ID = 0.65 A Semiconductor Group 2 Sep-12-1996 BSP 297 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 1.15 300 40 20 - S pF 400 60 30 ns 8 12 VDS≥ 2 * ID * RDS(on)max, ID = 0.65 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Rise time tr 15 25 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Fall time tf 50 70 VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 297 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 0.9 0.65 2.6 V 1.1 Values typ. max. Unit ISM VSD TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 1.3 A, Tj = 25 °C Semiconductor Group 4 Sep-12-1996 BSP 297 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.70 A 0.60 2.0 W Ptot 1.6 1.4 1.2 ID 0.55 0.50 0.45 0.40 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 297 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 1.5 A 1.3 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 6.5 Ptot = 2W ji f g hed lk c VGS [V] a b c d e 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 Ω 5.5 a b ID 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 1.0 2.0 3.0 4.0 5.0 a RDS (on) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS [V] = a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 bf g h i j k l c d ef h i j l gk V 7.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 2.2 A 1.8 S ID 1.8 1.6 gfs 1.4 1.2 1.4 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 0.2 0.0 0.0 0.4 0.8 1.2 1.6 1.0 0.8 0.6 VGS A ID 2.2 Semiconductor Group 6 Sep-12-1996 BSP 297 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.65 A, VGS = 10 V 5.0 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 4.0 3.5 3.0 2.5 2.0 1.5 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 1.6 1.2 typ 1.0 0.5 0.0 -60 -20 20 60 100 °C 160 2% 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 pF C 10 2 Ciss A IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 297 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 297 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996