BSP373

BSP 373 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 373 Type BSP 373 VDS 100 V ID 1.7 A RDS(on) 0.3 Ω Package SOT-223 Marking BSP 373 Ordering Code Q67000-S301 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 1.7 Unit A ID IDpuls 6.8 TA = 28 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 45 mJ ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 V W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 373 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.16 4 V VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.3 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 1.7 A Semiconductor Group 2 Sep-12-1996 BSP 373 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.5 2.8 400 125 70 - S pF 550 190 105 ns 10 15 VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time tr 30 45 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) 85 115 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf 60 80 VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 373 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 0.8 1.7 6.8 V 1.1 ns µC Values typ. max. Unit ISM VSD trr Qrr TA = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 1.7 A, Tj = 25 °C Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 Sep-12-1996 BSP 373 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 1.8 A 2.0 W Ptot 1.6 1.4 ID 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 373 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 3.8 A 3.2 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.9 a b Ptoth= 2W if g ec d VGS [V] a 4.0 b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 lj k Ω RDS (on) 0.7 0.6 0.5 0.4 0.3 c ID 2.8 b 2.4 2.0 1.6 1.2 a d e f g h i j k l 0.8 0.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.2 l ed g ikjh f j 9.0 k l 10.0 20.0 0.1 0.0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 0.0 0.4 0.8 1.2 1.6 2.0 A 2.8 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 6.5 A 4.5 S 5.5 ID 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 gfs 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 0.0 1.0 2.0 3.0 4.0 A ID 6.0 VGS Semiconductor Group 6 Sep-12-1996 BSP 373 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.7 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.65 98% RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 °C 160 VGS(th) 3.6 3.2 2.8 typ 98% 2.4 2.0 1.6 2% typ 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 nF C 10 0 A IF 10 0 Ciss 10 -1 Coss Crss 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 373 Avalanche energy EAS = ƒ(Tj ) parameter: ID = 1.7 A, VDD = 25 V RGS = 25 Ω, L = 23.3 mH 50 mJ Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 EAS 40 35 30 25 20 15 10 5 0 20 40 60 80 100 120 °C 160 1 V(BR)DSS 14 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Semiconductor Group 8 Sep-12-1996 BSP 373 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996