BSP75

HITFET® BSP 75 Smart Lowside Power Switch Features • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy VDS RDS(ON) ID(lim) ID(Nom) EAS 55 550 1 0.7 550 V mΩ A A mJ Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. V bb + LOAD M Drain 2 Overvoltage protection 1 IN dv/dt limitation Short circuit protection Short circuit Current protection limitation Source ESD Overtemperature protection 3 4 ® HITFET Pin 1 2 3 TAB Symbol IN DRAIN SOURCE SUBSTRATE Function Input Output to the load Ground Must be connected to Pin 3 Semiconductor Group Page 1 of 9 1998-02-04 HITFET® BSP 75 Maximum Ratings at Tj=25°C unless otherwise specified Parameter Continuous drain source voltage (overvoltage protection see page 4) Drain source voltage for short circuit protection Load dump protection VLoadDump=UP+US; UP=13.5 V RI1)=2 Ω; td=400ms; IN=low or high (8V) RL=50 Ω RI=2 Ω; td=400ms; IN=high (8V) RL=22 Ω Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation (DC) Unclamped single pulse inductive energy ID(ISO) = 0.7 A Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance junction soldering point: junction - ambient 3): Symbol VDS Values 55 32 Unit V V V 80 47 -0.2 ... +10 -0.2 ... +20 -40 ...+150 -55 ...+150 1.8 550 4000 VDS VLoadDump2) VIN VIN Tj Tstg Ptot EAS VESD V V °C W mJ V E 40/150/56 RthJS RthJA ≤10 ≤70 K/W 1) 2) RI=internal resistance of the load dump test pulse generator LD200 VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 3) Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection Semiconductor Group Page 2 1998-02-04 HITFET® BSP 75 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, unless otherwise specified Symbol Values min typ max Unit Static Characteristics Drain source clamp voltage ID = 10 mA Tj =-40...+150°C: Off state drain current VIN = 0 V, VDS = 32 V Tj =-40...+150°C: Input threshold voltage ID = 10 mA Input current normal operation, ID